Compounds and method of preparation of SiX and GeX compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a SiH and a XH moiety to form a SiX containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The SiX products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Sicontaining films.

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B:

##STR00001##

as defined herein.

Thio(di)silanes comprising a thiosilane of formula (A): (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(Si)X.sub.xH.sub.h (A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(R.sup.2.sub.2N)(SiSi)X.sub.xH.sub.h (I) wherein subscript s is from 1 to 6, and wherein R.sup.1a, R.sup.1b, R.sup.1c, R.sup.2, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(R.sup.2.sub.2N).sub.n(SiSi)X.sub.xH.sub.h (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R.sup.1a, R.sup.1b, R.sup.1c, R.sup.2.sub.2, and X are as described herein.

Certain disclosed embodiments concern a bioremediation composition comprising microbial cells, at least one co-metabolism substrate to induce selected enzyme production by the microbial cells, and a bead or gel encapsulating the microbial cells, such as bacterial or fungi cells, and the at least one co-metabolism substrate. For certain embodiments, the substrate is a slow release compound, such as an orthosilicate that hydrolyzes to produce an alcohol growth substrate. Embodiments of a method for using the composition to transform contaminants of concern also are disclosed.

Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via dehydrogenative coupling between the corresponding unsubstituted trisilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a SiH and a NH moiety to form an SiN containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The SiN containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

Compounds and method of preparation of SiX and GeX compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a SiH and a XH moiety to form a SiX containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The SiX products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

A solid electrolyte represented by general formula Li.sub.ySiR.sub.x(MO.sub.4), where x is an integer from 1 to 3 inclusive, y=4x, each R present is independently C1-C3 alkyl or C1-C3 alkoxy, and M is sulfur, selenium, or tellurium. Methods of making the solid electrolyte include combining a phenylsilane and a first acid to yield mixture including benzene and a second acid, and combining at least one of an alkali halide, and alkali amide, and an alkali alkoxide with the second acid to yield a product d represented by general formula Li.sub.ySiR.sub.x(MO.sub.4).sub.y. The second acid may be in the form of a liquid or a solid. The phenylsilane includes at least one C1-C3 alkyl substituent or at least one C1-C3 alkoxy substituent, and the first acid includes at least one of sulfuric acid, selenic acid, and telluric acid.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

An etchant composition includes a silane compound represented by the following Chemical Formula 1:

##STR00001## wherein R.sup.1 to R.sup.6 are independently hydrogen, halogen, a substituted or unsubstituted C.sub.1-C.sub.20 hydrocarbyl group, a phenyl group, a C.sub.1-C.sub.20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C.sub.1-C.sub.20) alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C.sub.1-C.sub.3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.