Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si—N bonds, at least one Si—Si bond, and at least two SiH.sub.2 groups represented by the following Formula IA, IB and IC: ##STR00001##
wherein R.sup.1 and R.sup.2 are independently selected from a linear or branched C.sub.1 to C.sub.10 alkyl group, a linear or branched C.sub.3 to C.sub.10 alkenyl group, a linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.3 to C.sub.10 cyclic alkyl group, C.sub.3 to C.sub.10 hetero-cyclic alkyl group, a C.sub.5 to C.sub.10 aryl group, and a C.sub.3 to C.sub.10 hetero-aryl group, a C.sub.2 to C.sub.10 dialkylamino group, a C.sub.3 to C.sub.10 cyclic alkylamino group; R.sup.3 and R.sup.4 are independently selected from hydrogen, a linear or branched C.sub.1 to C.sub.10 alkyl group, a linear or branched C.sub.2 to C.sub.10 alkenyl group, a linear or branched C.sub.2 to C.sub.10 alkynyl group, C.sub.3 to C.sub.10 cyclic alkyl group, C.sub.3 to C.sub.10 hetero-cyclic alkyl group, a C.sub.5 to C.sub.10 aryl group, and a C.sub.3 to C.sub.10 hetero-aryl group, a C.sub.2 to C.sub.10 dialkylamino group, a C.sub.3 to C.sub.10 cyclic alkylamino group; wherein R.sup.1 in Formula IA cannot both be methyl, R.sup.1 and R.sup.2 in Formula IB cannot both be iso-propyl, tert-butyl, and bezenyl and R.sup.3 and R.sup.4 cannot both be methyl and phenyl.

Provided are a compound, including metal atoms for forming metal nano particles through a simple process within a short time at a low production cost for commercial purposes, and a solution including the compound.

Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L.sup.1, L.sup.2, L.sup.3 and L.sup.4 is independently selected from oxygen or nitrogen atoms; L.sup.1 and L.sup.2 are joined together via a carbon bridge having one to three carbon atoms; L.sup.3 and L.sup.4 are joined together via a carbon bridge having one to three carbon atoms; L.sup.1, L.sup.2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and L.sup.3, L.sup.4 and the carbon bridge form a monoanionic ligand bonded to silicon.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2N—SiH.sub.2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula

(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),

wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.

The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR′).sub.x, wherein first WAIN is reacted with HNRR′ in order to form M[Al(NRR′).sub.4] and hydrogen, and then the formed M[Al(NRR′).sub.4] is reacted with EX.sub.x in order to form E(NRR′).sub.x and M[AlX.sub.4], wherein M=Li, Na, or K, R=C.sub.nH.sub.2n+1, where n=1 to 20, and independently thereof R′=C.sub.nH.sub.2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.

An etchant composition includes a silane compound represented by the following Chemical Formula 1: ##STR00001## wherein R.sup.1 to R.sup.6 are independently hydrogen, halogen, a substituted or unsubstituted C.sub.1-C.sub.20 hydrocarbyl group, a phenyl group, a C.sub.1-C.sub.20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C.sub.1-C.sub.20) alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C.sub.1-C.sub.3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.

Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

A heterocyclic compound is represented by formula (I): ##STR00001##
in which R.sup.2 represents a C1-C6 alkyl group optionally having one or more halogen atoms, n is 0, R.sup.3 represents a C1-C6 chain hydrocarbon group optionally having one or more substituents selected from Group B, q is 0, Het represents a group represented by the formulae Het 1 or Het 2, A.sup.1 represents a nitrogen atom, and Q.sup.2 represents an oxygen atom. The compound has excellent efficacy for controlling harmful arthropods. A composition is provided which contains the compound of formula (I) and one or more additional ingredients.

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X ═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.