A trichlorogermanide of formula (I): [R.sub.4N]/[R.sub.4P]Cl[GeCl.sub.3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R.sub.4N]/[R.sub.4P][Ge(SiCl.sub.3).sub.3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl.sub.3 of formula (III): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*GaCl.sub.3], and a tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*BBr.sub.3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV).

The present invention relates to a transition metal organic framework, comprising: a transition metal oxide having antibacterial or antifungal properties; and an organic compound having at least one hydrophilic functional group, wherein the organic compound is bound to the transition metal oxide to surround the transition metal oxide and the hydrophilic functional group is placed toward the outside of the transition metal organic framework.

A solid electrolyte represented by general formula Li.sub.ySiR.sub.x(MO.sub.4), where x is an integer from 1 to 3 inclusive, y=4−x, each R present is independently C1-C3 alkyl or C1-C3 alkoxy, and M is sulfur, selenium, or tellurium. Methods of making the solid electrolyte include combining a phenylsilane and a first acid to yield mixture including benzene and a second acid, and combining at least one of an alkali halide, and alkali amide, and an alkali alkoxide with the second acid to yield a product d represented by general formula Li.sub.ySiR.sub.x(MO.sub.4).sub.y. The second acid may be in the form of a liquid or a solid. The phenylsilane includes at least one C1-C3 alkyl substituent or at least one C1-C3 alkoxy substituent, and the first acid includes at least one of sulfuric acid, selenic acid, and telluric acid.

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formulae A and B: ##STR00001##
wherein R, R.sup.1, and R.sup.2-8 are as defined herein.

A composition contains a naphthalocyanine derivative represented by the following formula:

##STR00001##

where R.sub.1 to R.sub.8 are independently an alkyl group and R.sub.9 to R.sub.12 are independently an aryl group, and at least one hydrogen atom in at least one selected from the group consisting of R.sub.9, R.sub.10, R.sub.11, and R.sub.12 is substituted by an electron-withdrawing group.

Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.

A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula
(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),
wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

The present invention relates to compounds of the formula (1) and (2) which are suitable for use in electro¬nic devices, in particular organic electroluminescent devices.

Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.