A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with R.sup.3.sub.xSi(NR.sup.1R.sup.2).sub.4-x wherein R.sup.1-3 are the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20° C. to 300° C.

A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with R.sup.3.sub.xSi(NR.sup.1R.sup.2).sub.4-x wherein R.sup.1-3 are the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20° C. to 300° C.

Various articles and devices can be manufactured to take advantage of a what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.

Various articles and devices can be manufactured to take advantage of a what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.

Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

The present invention provides a POSS-containing in-situ composite nanogel with magnetic responsiveness and the method for preparing the same, wherein POSS-containing macromolecule capable of polymerizing and metal-coordination complexing is synthesized to complex with iron salt, Fe.sup.2+/Fe.sup.3+ salts are in-situ deposited via chemical coprecipitation, and crosslinking agent and initiator are added to induce polymerization so that POSS-containing nanogel ranges with magnetic responsiveness is obtained. The present invention is of professional design, feasible technique and simple operation, and prepared nanogel magnetic particles are well dispersed with excellent magnetic responsiveness, which possesses a good application prospect in medical diagnosis, sensor, catalyst carrier and biomaterial.

The present invention provides a POSS-containing in-situ composite nanogel with magnetic responsiveness and the method for preparing the same, wherein POSS-containing macromolecule capable of polymerizing and metal-coordination complexing is synthesized to complex with iron salt, Fe.sup.2+/Fe.sup.3+ salts are in-situ deposited via chemical coprecipitation, and crosslinking agent and initiator are added to induce polymerization so that POSS-containing nanogel ranges with magnetic responsiveness is obtained. The present invention is of professional design, feasible technique and simple operation, and prepared nanogel magnetic particles are well dispersed with excellent magnetic responsiveness, which possesses a good application prospect in medical diagnosis, sensor, catalyst carrier and biomaterial.

One-pot synthetic methods are disclosed for synthesizing curable, antimicrobial silsesquioxane-silica hybrids by hydrolytically co-condensing a tetraalkoxysilane with two different trialkoxysilanes. Particles are also disclosed that are substantially spherical and have an ordered lamellar internal structure. In addition, polymers prepared front the curable, antimicrobial silsesquioxane-silica hybrids and co-monomers are disclosed.

One-pot synthetic methods are disclosed for synthesizing curable, antimicrobial silsesquioxane-silica hybrids by hydrolytically co-condensing a tetraalkoxysilane with two different trialkoxysilanes. Particles are also disclosed that are substantially spherical and have an ordered lamellar internal structure. In addition, polymers prepared front the curable, antimicrobial silsesquioxane-silica hybrids and co-monomers are disclosed.

The present invention relates to a process for the production of perhalogenated hexasilane anion by reacting halogenated monosilane in the presence of organosubstituted ammonium and/or phosphonium halide at temperatures in a range from 100 to 120° C., wherein no solvent is used, and a process for the production of a cyclic silane compound of the formula Si.sub.6R.sub.12, by reacting [X].sub.2[Si.sub.6Cl.sub.14] with AlR.sub.3 in at least one organic solvent, wherein R is chlorine or methyl and X, the same or different, is a counter-cation and is preferably selected from organosubstituted ammonium, organosubstituted phosphonium, alkali metal ions and [(PEDETA)(H.sub.2SiCl)]+.