Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC).sub.3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC).sub.3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask. ##STR00001##

Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′.sub.3).sub.3, R′R″ACSnL.sub.3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R′″O)CSnL.sub.3 or R′R″(N≡C)CSnZ.sub.3.

This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:

Chemical Formula 1

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wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b.

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent:

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In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR.sup.1 or —OC(═O)R.sup.2.

The invention relates to a new dialkyl tin oxide catalyst composition and its use for the synthesis of amino alkyl (meth)acrylates by transesterification from an alkyl (meth)acrylates and an amino alcohol, and especially 2-dimethylaminoethyl (meth)acrylate.

The invention also relates to polymers made with quaternized amino alkyl (meth)acrylates and use of said polymers in water treatment, sludge dewatering, papermaking process, agriculture, cosmetic and detergency composition, textile process, oil and gas recovery process such as enhanced oil recovery, fracturing, mining operation such as tailings treatment.

Tin(IV)-117m is reduced by an acidic antimony solution to tin(II)-117m. A chelant is added to the solution of tin(II)-117m, and the pH is raised, forming tin(II)-117m chelant complex. The chelant is a bifunctional chelant, preferably attached to a bioactive molecule and reacted with the tin(II)-117m to form a radiopharmaceutical.

The present invention relates to a transition metal organic framework, comprising: a transition metal oxide having antibacterial or antifungal properties; and an organic compound having at least one hydrophilic functional group, wherein the organic compound is bound to the transition metal oxide to surround the transition metal oxide and the hydrophilic functional group is placed toward the outside of the transition metal organic framework.