A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR).sub.3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR.sub.2).sub.3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn(NRCOR).sub.3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R and R are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

Provided are a semiconductor photoresist composition including an organotin compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns using the same. The method of forming patterns may include forming an etching-objective layer on a substrate, coating the semiconductor photoresist composition on the etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

Cyclic azastannanes and cyclic oxostannanes having formulas (I) and (II) where X is an alkoxy or dialkylamino group are a new class of cyclic compounds. These compounds have desirably high vapor pressure and high purity (containing low levels of polyalkyl contaminants after purification), and have particular interest for EUV photoresist applications. Methods for preparing these compounds are described.

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A compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound for forming a metal-containing film is represented by the following general formula (M-1) or (M-2). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; a patterning process in which the composition is used as a resist underlayer film material; a patterning process in which the composition is used as a resist material; and a semiconductor photoresist material containing the composition.

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Methods for synthesizing iodoalkyl tin trialkoxide and diiodoalkyl tin trialkoxide compounds having the chemical formulas RSn(OR).sub.3 and RSn(OR).sub.3 are described. R is a primary or secondary iodoalkyl group having about 2 to about 10 carbon atoms and containing at least one iodine atom, R is a primary or secondary iodoalkyl group having about 2 to about 10 carbon atoms and containing two iodine atoms, and R is a primary, secondary, or tertiary alkyl group having about 1 to about 5 carbon atoms. The iodoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their desirable purity and low concentration of bisiodoalkyl and bisdiioodoalkyl impurities.

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR).sub.3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR.sub.2).sub.3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn(NRCOR).sub.3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R and R are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR).sub.3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR.sub.2).sub.3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn(NRCOR).sub.3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R and R are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC).sub.3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

A semiconductor photoresist composition including an organometallic compound, an additive represented by Chemical Formula 1, and a solvent, and a method of forming uses the semiconductor photoresist composition. Details of Chemical Formula 1 are as defined in the specification.

Monoorgano tin trialkoxide compounds having chemical formula RSn(OR).sub.3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.