A process comprising: (a) contacting a feed stream comprising a di-alkyltin dihalide distillate with an alkylation agent, thereby forming an alkylated mixture comprising R.sub.4Sn and optionally R.sub.3SnX, R.sub.2SnX.sub.2, or mixtures thereof, where R is a linear, branched or cyclic C.sub.1-C.sub.20 alkyl, and X is a halide; (b) contacting the alkylated mixture with SnX.sub.4, thereby forming an alkyltin halide mixture comprising RSnX.sub.3, R.sub.2SnX.sub.2, and optionally impurities, R.sub.3SnX or mixtures thereof; (c) separating by distillation the alkyltin halide mixture to form a mono-alkyltin halide-rich distillate stream and a liquid di-alkyltin halide-rich bottoms stream comprising R.sub.2SnX.sub.2, RSnX.sub.3, and optionally impurities, R.sub.3SnX, or mixtures thereof; (d) separating by distillation the di-alkyltin halide-rich bottoms stream, thereby forming the liquid di-alkyltin dihalide distillate comprising R.sub.2SnX.sub.2, and optionally RSnX.sub.3, R.sub.3SnX or mixtures thereof, and an impurities-rich bottoms stream; and (e) recycling a part, x.sub.recycle, of the liquid di-alkyltin dihalide distillate to step (a), where x.sub.recycle ranges from greater than 0.0% to 100.0% of the distillate.

A method for storing organotin compounds and an article that is particularly useful for maintaining the high purity of organotin compounds for semiconductor applications is described. The method for storing an organotin compound involves storing the organotin compound in a container and filling the headspace of the container with an inert gas, in which the container is a multilayer resin container containing, at least a light-shielding layer, a gas barrier layer, and an innermost layer, and the material constituting the innermost layer in contact with the organotin compound includes perfluoroalkoxyalkane, polytetrafluoroethylene, phenol resin, and/or ultra-high molecular weight polyethylene.

Monoalkyl tin triamide compounds having purity of at least about 99 mol % and the chemical formula RSn(NMe.sub.2).sub.3 are described. R.sup.1 is selected from R.sup.A, R.sup.B and R.sup.C; R.sup.A is a primary alkyl group having about 1 to 10 carbon atoms, R.sup.B is a secondary alkyl group having about 3 to 10 carbon atoms, and R.sup.C is a tertiary alkyl group having about 3 to 10 carbon atoms; each R.sup.2 is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R.sup.1Sn(NR.sup.2.sub.2).sub.2(N(R.sup.2)CH.sub.2NR.sup.2.sub.2) is less than about 1 mol %. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.

Monoalkyl tin triamide compounds having purity of at least about 99 mol % and the chemical formula RSn(NMe.sub.2).sub.3 are described. R.sup.1 is selected from R.sup.A, R.sup.B, and R.sup.C; R.sup.A is a primary alkyl group having about 1 to 10 carbon atoms, R.sup.B is a secondary alkyl group having about 3 to 10 carbon atoms, and R.sup.C is a tertiary alkyl group having about 3 to 10 carbon atoms; each R.sup.2 is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R.sup.1Sn(NR.sup.2.sub.2).sub.2(N(R.sup.2)CH.sub.2NR.sup.2.sub.2) is less than about 1 mol %. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.

Monoalkyl tin triamide compounds having purity of at least about 99 mol % and the chemical formula RSn(NMe.sub.2).sub.3 are described. R.sup.1 is selected from R.sup.A, R.sup.B, and R.sup.C; R.sup.A is a primary alkyl group having about 1 to 10 carbon atoms, R.sup.B is a secondary alkyl group having about 3 to 10 carbon atoms, and R.sup.C is a tertiary alkyl group having about 3 to 10 carbon atoms; each R.sup.2 is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R.sup.1Sn(NR.sup.2.sub.2).sub.2(N(R.sup.2)CH.sub.2NR.sup.2.sub.2) is less than about 1 mol %. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.

Monoalkyl tin triamide compounds having purity of at least about 99 mol % and the chemical formula RSn(NMe.sub.2).sub.3 are described. R.sup.1 is selected from R.sup.A, R.sup.B, and R.sup.C; R.sup.A is a primary alkyl group having about 1 to 10 carbon atoms, R.sup.B is a secondary alkyl group having about 3 to 10 carbon atoms, and R.sup.C is a tertiary alkyl group having about 3 to 10 carbon atoms; each R.sup.2 is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R.sup.1Sn(NR.sup.2.sub.2).sub.2(N(R.sup.2)CH.sub.2NR.sup.2.sub.2) is less than about 1 mol %. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.

Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.