Diphosphites having an open, 3-methylated outer unit and use thereof in hydroformylation.

The present disclosure relates to (a) carbidopa prodrugs, (b) pharmaceutical combinations and compositions comprising a carbidopa prodrug and/or an L-dopa prodrug, and (c) methods of treating Parkinson's disease and associated conditions comprising administering a carbidopa prodrug and an L-dopa prodrug to a subject with Parkinson's disease.

The present disclosure relates to (a) carbidopa prodrugs, (b) pharmaceutical combinations and compositions comprising a carbidopa prodrug and/or an L-dopa prodrug, and (c) methods of treating Parkinson's disease and associated conditions comprising administering a carbidopa prodrug and an L-dopa prodrug to a subject with Parkinson's disease.

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R.sub.3-vH.sub.vSi)—(R.sub.2-wH.sub.wSi).sub.n].sub.xPH.sub.yR′.sub.z, where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

The invention relates to the compounds or its pharmaceutical acceptable polymorphs, solvates, enantiomers, stereoisomers and hydrates thereof. The pharmaceutical compositions comprising an effective amount of compounds of formula I, formula II, formula III, formula IV and formula V and the methods for the treatment of xerostomia may be formulated for oral, buccal, rectal, topical, transdermal, transmucosal, lozenge, spray, intravenous, oral solution, buccal mucosal layer tablet, parenteral administration, syrup, or injection. Such compositions may be used to treatment of oral mucosal inflammatory, dry mouth or oral dry mouth mediated infectious diseases.

The invention relates to the compounds or its pharmaceutical acceptable polymorphs, solvates, enantiomers, stereoisomers and hydrates thereof. The pharmaceutical compositions comprising an effective amount of compounds of formula I, formula II, formula III, formula IV and formula V and the methods for the treatment of xerostomia may be formulated for oral, buccal, rectal, topical, transdermal, transmucosal, lozenge, spray, intravenous, oral solution, buccal mucosal layer tablet, parenteral administration, syrup, or injection. Such compositions may be used to treatment of oral mucosal inflammatory, dry mouth or oral dry mouth mediated infectious diseases.

The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass.

##STR00001##

(For definition of R, see the specification.)

The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass.

##STR00001##

(For definition of R, see the specification.)

Provided are a near-infrared-ray-absorbing composition having strong near-infrared shielding properties when a cured film is produced, a near-infrared-ray cut filter, a manufacturing method therefor, a camera module, and a manufacturing method therefor. The near-infrared-ray-absorbing composition includes a copper complex obtained by reacting a compound (A) having at least two coordination sites with a copper component.

Provided are a near-infrared-ray-absorbing composition having strong near-infrared shielding properties when a cured film is produced, a near-infrared-ray cut filter, a manufacturing method therefor, a camera module, and a manufacturing method therefor. The near-infrared-ray-absorbing composition includes a copper complex obtained by reacting a compound (A) having at least two coordination sites with a copper component.