The present invention provides a heterocyclic compound represented by Formula 1, an organic light-emitting device comprising the same, and a composition for forming an organic layer.

The present invention provides a heterocyclic compound represented by Formula 1, an organic light-emitting device comprising the same, and a composition for forming an organic layer.

An electrolyte solution whose residual capacity is less likely to decrease and whose percentage increase in resistance is less likely to change even after stored at high temperature. The electrolyte solution contains a compound (1) represented by the following formula (1):
R.sup.11CFX.sup.11(CH.sub.2).sub.n11COOR.sup.12
wherein R.sup.11 is H, F, a C1-C3 non-fluorinated alkyl group, or a C1-C3 fluorinated alkyl group; X.sup.11 is H or F; R.sup.12 is a C1-C3 non-fluorinated alkyl group or a C1-C3 fluorinated alkyl group; and n11 is an integer of 0 to 3; a fluorinated carbonate; and a specific additive.

An electrolyte solution whose residual capacity is less likely to decrease and whose percentage increase in resistance is less likely to change even after stored at high temperature. The electrolyte solution contains a compound (1) represented by the following formula (1):
R.sup.11CFX.sup.11(CH.sub.2).sub.n11COOR.sup.12
wherein R.sup.11 is H, F, a C1-C3 non-fluorinated alkyl group, or a C1-C3 fluorinated alkyl group; X.sup.11 is H or F; R.sup.12 is a C1-C3 non-fluorinated alkyl group or a C1-C3 fluorinated alkyl group; and n11 is an integer of 0 to 3; a fluorinated carbonate; and a specific additive.

In one aspect, a chelating phosphine-phosphonic diamide (PPDA) ligand is described herein for constructing transition metal complexes operable for catalysis of olefin polymerization, including copolymerization of ethylene with polar monomer.

In one aspect, a chelating phosphine-phosphonic diamide (PPDA) ligand is described herein for constructing transition metal complexes operable for catalysis of olefin polymerization, including copolymerization of ethylene with polar monomer.

The sulfonium salt has high photosensitivity to i-rays and high compatibility with cationically polymerizable compounds such as epoxy compounds, and is excellent storage stability in formulations containing such compounds. The sulfonium salt is represented by general formula (1). In formula (1), R represents an alkyl group or an aryl group; substituents, R1 to R5, each independently represent an alkyl group, a hydroxy group, an alkoxy group, an aryl group, an aryloxy group, a hydroxy(poly)alkyleneoxy group, or a halogen atom; R6 to R9 each independently represent an alkyl group, an aryl group, or a hydrogen atom; m.sup.1 to m.sup.5 each represent the number of occurrences of each of R1 to R5, m.sup.1 and m.sup.4 represent an integer of 0 to 3, m.sup.2 and m.sup.5 represent an integer of 0 to 4, m.sup.3 represents an integer of 0 to 5, and X.sup.− represents a monovalent polyatomic anion.

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Provided is a method for oligomerization of ethylene, and more particularly, a method for producing 1-hexene and 1-octene at a high selectivity under an ethylene atmosphere by inducing a remarkably improved catalytic activity while effectively reducing a production amount of polyethylene by introducing the oligomerization catalyst and a cocatalyst mixture containing at least two aluminums together and adjusting the kind of oligomerization catalyst and injection conditions thereof.

Provided is a method for oligomerization of ethylene, and more particularly, a method for producing 1-hexene and 1-octene at a high selectivity under an ethylene atmosphere by inducing a remarkably improved catalytic activity while effectively reducing a production amount of polyethylene by introducing the oligomerization catalyst and a cocatalyst mixture containing at least two aluminums together and adjusting the kind of oligomerization catalyst and injection conditions thereof.

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R.sub.3-vH.sub.vSi)(R.sub.2-wH.sub.wSi).sub.n].sub.xPH.sub.yR.sub.z, where each instance of R and each instance of R are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.