An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Organometallic photoresists suitable for use in deep ultraviolet (DUV) or extreme ultraviolet (EUV) lithography are provided. The organometallic photoresists contain an organometallic molecule having least a metal element M selected from the group consisting of Bi, Sb, and mixtures thereof, and having an oxidation state of 3+, and at least one polymerizable group R. A method of forming a patterned materials feature on a substrate utilizing the organometallic photoresist compositions is also provided.

The present disclosure relates to compounds and use thereof as lithographic compositions such as EUV photoresist films. More particularly, embodiments of the disclosure provide lithography compositions and methods of depositing radiation sensitive films, which can be used for patterning applications with UV light, EUV light or electron-beam radiation to form high resolution patterns with low line width roughness. In embodiments, novel ligands are provided for forming radiation sensitive film compositions.

The present disclosure relates to compounds and use thereof as lithographic compositions such as EUV photoresist films. More particularly, embodiments of the disclosure provide lithography compositions and methods of depositing radiation sensitive films, which can be used for patterning applications with UV light, EUV light or electron-beam radiation to form high resolution patterns with low line width roughness. In embodiments, novel ligands are provided for forming radiation sensitive film compositions.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.510.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.510.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

The present invention relates to a metal organic framework comprising of a metal ion (M) and an organic ligand wherein more than one hydroxy ligand are present about the metal ion. Also provided is a method for synthesizing the metal-organic frameworks and their application in areas including scrubbing exhaust gas streams of acidic gases, scrubbing natural gas of acidic gases by separation or sequestration and separating C.sub.2H.sub.a or other VOC gases from other gas mixtures.

The present invention relates to a metal organic framework comprising of a metal ion (M) and an organic ligand wherein more than one hydroxy ligand are present about the metal ion. Also provided is a method for synthesizing the metal-organic frameworks and their application in areas including scrubbing exhaust gas streams of acidic gases, scrubbing natural gas of acidic gases by separation or sequestration and separating C.sub.2H.sub.a or other VOC gases from other gas mixtures.

Embodiments disclosed herein are directed to positive-tone photoresist compositions. Traditional chemically amplified resists have intrinsic limitations for use in high resolution Extreme UltraViolet (EUV) lithography due to low EUV absorptivity. Positive-tone photoresists efficiently absorb EUV light are needed to meet demands of high resolution, high sensitivity, and low line-edge-roughness. Organometallic complexes are promising candidates providing high EUV absorptivity. Positive-tone resists are used for most lithography steps in high-volume manufacturing making metal-containing positive-tone resists enormously valuable. Thus, embodiments herein disclose new positive-tone photoresist lithography compositions, and methods for forming resist patterns using one or more lithography compositions.

Embodiments disclosed herein are directed to positive-tone photoresist compositions. Traditional chemically amplified resists have intrinsic limitations for use in high resolution Extreme UltraViolet (EUV) lithography due to low EUV absorptivity. Positive-tone photoresists efficiently absorb EUV light are needed to meet demands of high resolution, high sensitivity, and low line-edge-roughness. Organometallic complexes are promising candidates providing high EUV absorptivity. Positive-tone resists are used for most lithography steps in high-volume manufacturing making metal-containing positive-tone resists enormously valuable. Thus, embodiments herein disclose new positive-tone photoresist lithography compositions, and methods for forming resist patterns using one or more lithography compositions.