To provide a liquid metal complex having an oxygen absorbing ability, containing a cobalt-acacen complex or a derivative thereof, and an ionic liquid in which an ionic ligand having an amine structure and a counter ion thereof are paired, in which the cobalt-acacen complex or the derivative thereof is expressed by general formula (1):

##STR00001##

and the liquid metal complex has a structure in which the amine structure of the ionic ligand is axially coordinated with a cobalt atom of the cobalt-acacen complex or the derivative thereof.

To provide a method for producing an amidinate metal complex which is represented by [R.sup.1—N—C(R.sup.3)—N—R.sup.2]nM in cost saving and simple manner.

A method for producing an amidinate metal complex represented by [R.sup.1—N—C(R.sup.3)—N—R.sup.2]nM including: a first step in which R.sup.3X is reacted with a metal Li in a solvent to obtain R.sup.3Li solution with LiX suspended therein; a second step in which the R.sup.3Li solution with LiX existing therein is reacted with R.sup.1—N═C═N—R.sup.2 to obtain a [R.sup.1—N—C(R.sup.3)—N—R.sup.2]Li solution with the LiX suspended therein; a third step in which the [R.sup.1—N—C(R.sup.3)—N—R.sup.2]Li solution with the LiX existing therein is reacted with MX to obtain an amidinate metal complex solution, represented by the [R.sup.1—N—C(R.sup.3)—N—R.sup.2]nM, with the LiX suspended therein; and a fourth step for removing the LiX in the solution obtained by the third step.

A pyrazole metal complex for absorption of carbon dioxide, a method for preparing the pyrazole metal complex, and a method for absorbing carbon dioxide are provided; wherein the product produced by reacting pyrazole metal complex and carbon dioxide may be transformed into several economically valuable compounds.

A method for depositing a metal layer includes a step of contacting a surface of an electrically conductive substrate with a vapor of a metal-containing compound for a first predetermined pulse time to form a modified surface on the electrically conductive substrate. The metal-containing compound is a metal diketonate or a structurally similar compound. The modified surface is contacted with a vapor of a reducing agent that is a hydrazine or a hydrazine derivative for a second predetermined pulse time to form a metal-containing film on the surface of the electrically conductive substrate. Characteristically, the metal-containing film includes the metal atom in a zero oxidation state in an amount greater than 80 mole percent.

A feedstock material for use in an additive manufacturing apparatus is prepared from a first material and a metal organic framework (MOF). The MOF comprises a plurality of nodes and a plurality of linkers, the plurality of linkers coupled to the plurality of nodes, thereby forming a framework. The MOF has a lower coefficient of thermal expansion than a coefficient of thermal expansion for the first material. As a result, the feedstock material has a reduced coefficient of thermal expansion as compared to the first material alone and thus exhibits low thermal expansion as its temperature is increased. The coefficient of thermal expansion for the MOF may be modified by using a different plurality of nodes and/or a different plurality of linkers, as well as by incorporating guest molecules or atoms into the framework of the MOF.

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below.

##STR00001##

(in the formula, R.sup.1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R.sup.2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R.sup.3 and R.sup.4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

Disclosed are compounds, methods, reagents, systems, and kits for the preparation and utilization of monomeric or polymeric metal-based compounds. These metal-based compounds are organometallic catalysts composed of substituted dipyrrin ligands bound to transition metals. C—H bond functionalization catalysis can be performed with the disclosed organometallic catalysts to yield C—N bonds to generate substituted bicyclic, spiro, and fused nitrogen-containing heterocycles, all common motifs in various pharmaceutical and bioactive molecules.

To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.

A cobalt complex represented by the following formula (1):

L.sup.1-Co-L.sup.2  (1)

wherein L.sup.1 and L.sup.2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):

##STR00001##

wherein R.sup.1 and R.sup.2 represent a C.sub.1-6 alkyl group or a tri(C.sub.1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;

##STR00002##

wherein R.sup.3 represents a tri(C.sub.1-6 alkyl)silyl group, R.sup.4 and R.sup.5 represent a C.sub.1-4 alkyl group, and X represents a C.sub.1-6 alkylene group;

##STR00003##

wherein R.sup.6 and R.sup.8 represent a C.sub.1-6 alkyl group, R.sup.7 represents a hydrogen atom or a C.sub.1-4 alkyl group, Y represents an oxygen atom or NR.sup.9, Z represents an oxygen atom or NR.sup.10, and R.sup.9 and R.sup.10 independently represent a C.sub.1-6 alkyl group.

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R.sup.1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R.sup.2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

Provided herein are homoleptic metal coordination complexes that induce cellular apoptosis and cell cycle arrest in G0/G1 phase in fungus, such as Candida spp. Also disclosed are methods of inhibiting fungal growth and methods of treating fungal infections using the disclosed compounds. The disclosed compounds exhibit anti-Candida activity against fluconazole resistant and sensitive strains of C. albicans at low concentrations.