Disclosed is an article comprising polymers and copolymers selected from the group consisting of poly(vinylbiphenyl), poly(vinylcyclohexylstyrene), substituted versions thereof, and blends thereof, the polymer or copolymer having a weight average molecular weight (Mw) of at least 100 kg/mole and a glass transition temperature (Tg) of at least 100 C. The polymers are desirably processed in the melted state at a temperature of at least 150 C. to impart orientation and extensional strain hardening.

Disclosed is an article comprising polymers and copolymers selected from the group consisting of poly(vinylbiphenyl), poly(vinylcyclohexylstyrene), substituted versions thereof, and blends thereof, the polymer or copolymer having a weight average molecular weight (Mw) of at least 100 kg/mole and a glass transition temperature (Tg) of at least 100 C. The polymers are desirably processed in the melted state at a temperature of at least 150 C. to impart orientation and extensional strain hardening.

A polymer (P) to generate an acid by light exposure and to change in solubility in a developer with an action of the acid, the polymer containing: a repeating unit represented by the following formula (A-1); a repeating unit represented by any one or more selected from the following formulae (B-1), (B-2), (B-3), and (B-4) to generate an acid by light exposure; and a repeating unit represented by the following formula (a-1) or (a-2) other than the repeating unit represented by the formula (A-1). This provides a polymer to be contained in a resist composition that is excellent in etching resistance and that makes it possible to form a pattern with high sensitivity, high resolution, high contrast, and small LWR and CDU when using, in particular, an electron beam or an extreme ultraviolet ray (EUV) having a wavelength of 13.5 nm; a resist composition containing the polymer; and a patterning process using the resist composition.

##STR00001##

A polymer (P) to generate an acid by light exposure and to change in solubility in a developer with an action of the acid, the polymer containing: a repeating unit represented by the following formula (A-1); a repeating unit represented by any one or more selected from the following formulae (B-1), (B-2), (B-3), and (B-4) to generate an acid by light exposure; and a repeating unit represented by the following formula (a-1) or (a-2) other than the repeating unit represented by the formula (A-1). This provides a polymer to be contained in a resist composition that is excellent in etching resistance and that makes it possible to form a pattern with high sensitivity, high resolution, high contrast, and small LWR and CDU when using, in particular, an electron beam or an extreme ultraviolet ray (EUV) having a wavelength of 13.5 nm; a resist composition containing the polymer; and a patterning process using the resist composition.

##STR00001##

A functional polymer of styrene derivative a copolymer of a monomer A having the structure represented by the formula (I) and a comonomer. The functional polymer of styrene derivative of the present invention can be easily further chemically modified. Meanwhile, basic properties of the functional polymer, such as glass transition temperature, viscoelasticity and the like, can be easily adjusted by adjusting the amount of the styrene derivative added.

##STR00001##

The present invention provides, inter alia, a process for incorporating a cyclopropenium ion into a polymeric system. Processes for making cross-linked polymers, linear polymers, and dendritic polymers, as well as for incorporating a cyclopropenium ion onto a preformed polymer are also provided. Further provided are stable, polycationic compounds, various polymers that contain stable cyclopropenium cations, and substrates containing such polymers. The use of these polymers in water purification systems, antimicrobial coatings, ion-transport membranes, cell supports, drug delivery vehicles, and gene therapeutic vectors are also provided.

The present invention provides, inter alia, a process for incorporating a cyclopropenium ion into a polymeric system. Processes for making cross-linked polymers, linear polymers, and dendritic polymers, as well as for incorporating a cyclopropenium ion onto a preformed polymer are also provided. Further provided are stable, polycationic compounds, various polymers that contain stable cyclopropenium cations, and substrates containing such polymers. The use of these polymers in water purification systems, antimicrobial coatings, ion-transport membranes, cell supports, drug delivery vehicles, and gene therapeutic vectors are also provided.

A polymer which has M.sub.n at least 4,000 and comprises polymerized units of a compound of formula NAr.sup.1A.sup.2A.sup.3, wherein Ar.sup.1, Ar.sup.2 and Ar.sup.3 independently are C.sub.6-C.sub.40 aromatic substituents; Ar.sup.1, Ar.sup.2 and Ar.sup.3 collectively contain no more than one nitrogen atom and at least one of Ar.sup.1, Ar.sup.2 and Ar.sup.3 contains a vinyl group attached to an aromatic ring.

A polymer which has M.sub.n at least 4,000 and comprises polymerized units of a compound of formula NAr.sup.1A.sup.2A.sup.3, wherein Ar.sup.1, Ar.sup.2 and Ar.sup.3 independently are C.sub.6-C.sub.40 aromatic substituents; Ar.sup.1, Ar.sup.2 and Ar.sup.3 collectively contain no more than one nitrogen atom and at least one of Ar.sup.1, Ar.sup.2 and Ar.sup.3 contains a vinyl group attached to an aromatic ring.

A curable composition containing a polymerizable compound (a), a photopolymerization initiator (b), and a solvent (c), wherein the curable composition has viscosity of not less than 2 mPa.Math.s and not more than 60 mPa.Math.s at 23? C., a content of the solvent (d) with respect to the whole curable composition is not less than 5 vol % and not more than 95 vol %, a boiling point of the solvent (d) at normal pressure is less than 250? C., and the polymerizable compound (a) contains a compound (a-1) containing not less than one aromatic ring or aromatic heterocycle, and not less than four vinyl groups directly bonding to the aromatic ring or the aromatic heterocycle.