A positive electrode includes a composite material including a positive active material and a coating layer on a surface of the positive active material, wherein the coating layer includes a copolymer including a first repeating unit represented by Formula 1 below and a second repeating unit represented by Formula 2 below:

##STR00001##

wherein Ar.sub.1, R.sub.1 to R.sub.6, A, A.sub.1,

##STR00002##

Y.sup.−, m, and n are the same as defined in the specification.

A positive electrode includes a composite material including a positive active material and a coating layer on a surface of the positive active material, wherein the coating layer includes a copolymer including a first repeating unit represented by Formula 1 below and a second repeating unit represented by Formula 2 below:

##STR00001##

wherein Ar.sub.1, R.sub.1 to R.sub.6, A, A.sub.1,

##STR00002##

Y.sup.−, m, and n are the same as defined in the specification.

The present invention relates to a preparation method of a highly aromatic hydrocarbon hydrogenated resin, comprising the processes of fraction cutting, pretreatment, catalytic polymerization, two-stage hydrogenation, etc. The highly aromatic hydrocarbon hydrogenated resin obtained by the present invention has excellent compatibility with elastomers such as SBS, SIS and the like, and is suitable for hot melt adhesives, coatings, rubber modification, etc.

The present invention relates to a preparation method of a highly aromatic hydrocarbon hydrogenated resin, comprising the processes of fraction cutting, pretreatment, catalytic polymerization, two-stage hydrogenation, etc. The highly aromatic hydrocarbon hydrogenated resin obtained by the present invention has excellent compatibility with elastomers such as SBS, SIS and the like, and is suitable for hot melt adhesives, coatings, rubber modification, etc.

A positive resist material contains an acid generator, and a base polymer containing a repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond. The repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond is represented by a repeating unit-a in the following formula (1). Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials and smaller dimensional variation; and a patterning process.

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A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

##STR00001##

##STR00002##

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

##STR00001##

##STR00002##

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

The object of the invention is to provide a novel olefin-based molded product useful for various applications.

An olefin-based molded product comprising a polymer including a structural unit of at least one polar olefin monomer represented by the general formula (I) CH2=CH—R.sup.2—Z(R.sup.1)n is provided. In the formula, Z is a hetero atom selected from the group consisting of nitrogen, oxygen, phosphorus, sulfur, and selenium; R.sup.1 is a substituted or unsubstituted hydrocarbyl group having 1 to 30 carbon atoms; n is an integer of 1 or 2 depending on the atomic species of Z; and R.sup.2 is a substituted or unsubstituted hydrocarbylene group having 2 to 20 carbon atoms.