The polymerization stability and the chemical stability and the water resistance of resin films are improved. A surfactant composition according to an embodiment contains a surfactant (A) represented by general formula (1) and an anionic surfactant (B) having a hydrophobic group different from that of the surfactant (A). In the formula, R.sup.1 represents one or two groups selected from groups below, D.sup.1 represents a polymerizable unsaturated group represented by chemical formula D.sup.1-1 or D.sup.1-2 below, R.sup.2 represents a hydrogen atom or a methyl group, m1 and m2 represent 1 to 2, A.sup.1 represents an alkylene group with 2 to 4 carbon atoms, and m3 represents 1 to 100.

##STR00001##

A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm.sup.2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.

A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm.sup.2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.

Cyclopentene monomers and methods of polymerization, including the polymerization of the cyclopentene monomers. The cyclopentene monomers include allylic substituted cyclopentene monomers that may be racemic or enantiopure. The methods of polymerization may permit the resulting polymers to have one or more desirable structural features.

The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), ##STR00001## wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R.sup.0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L.sub.0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L.sub.0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), ##STR00001## wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R.sup.0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L.sub.0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L.sub.0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), ##STR00001## wherein R.sup.1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R.sup.1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L.sub.7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L.sub.8 represents the partial structure represented by the following formula (i), 0o<1, 0<p1 and o+p=1, ##STR00002##
wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R.sup.0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L.sub.0 represents a divalent organic group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), ##STR00001## wherein R.sup.1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R.sup.1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L.sub.7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L.sub.8 represents the partial structure represented by the following formula (i), 0o<1, 0<p1 and o+p=1, ##STR00002##
wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R.sup.0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L.sub.0 represents a divalent organic group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), ##STR00001##
wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), ##STR00002## This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), ##STR00001##
wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), ##STR00002## This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.