Methods of fabricating three-dimensional rubber-like objects which utilize one or more modeling material formulations which comprise an elastomeric curable material and silica particles are provided. Objects made of the modeling material formulations and featuring improved mechanical properties are also provided.

Methods of fabricating three-dimensional rubber-like objects which utilize one or more modeling material formulations which comprise an elastomeric curable material and silica particles are provided. Objects made of the modeling material formulations and featuring improved mechanical properties are also provided.

The present invention provides a polymerizable composition containing a specific polymerizable compound and a fluorosurfactant having, in its molecule, a pentaerythritol skeleton or a dipentaerythritol skeleton. The invention also provides an optically anisotropic body, a retardation film, an antireflective film, and a liquid crystal display device that are produced using the polymerizable composition of the present invention. The present invention is useful because, when an optically anisotropic body is produced by photo-polymerization of the polymerizable composition, three features including the leveling properties of the surface of the optically anisotropic body, offset onto the substrate, and liquid crystal alignment can be improved simultaneously.

The present invention provides a polymerizable composition containing a specific polymerizable compound and a fluorosurfactant having, in its molecule, a pentaerythritol skeleton or a dipentaerythritol skeleton. The invention also provides an optically anisotropic body, a retardation film, an antireflective film, and a liquid crystal display device that are produced using the polymerizable composition of the present invention. The present invention is useful because, when an optically anisotropic body is produced by photo-polymerization of the polymerizable composition, three features including the leveling properties of the surface of the optically anisotropic body, offset onto the substrate, and liquid crystal alignment can be improved simultaneously.

A copolymer includes a monomer unit (A) represented by formula (I), shown below, and a monomer unit (B) represented by formula (II), shown below, and has a weight-average molecular weight of 230,000 or more. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R.sup.1 is an alkyl group, R.sup.2 is hydrogen, an alkyl group, a halogen atom, a haloalkyl group, a hydroxy group, a carboxy group, or a halocarboxy group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R.sup.2 is present, each R.sup.2 may be the same or different.

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A copolymer includes a monomer unit (A) represented by formula (I), shown below, and a monomer unit (B) represented by formula (II), shown below, and has a weight-average molecular weight of 230,000 or more. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R.sup.1 is an alkyl group, R.sup.2 is hydrogen, an alkyl group, a halogen atom, a haloalkyl group, a hydroxy group, a carboxy group, or a halocarboxy group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R.sup.2 is present, each R.sup.2 may be the same or different.

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Phosphine phosphonate and phenoxyphosphine ligands bearing polyethylene glycol (PEG) chains are used as described herein to produce heterobimetallic catalysts. The ligands can be metallated selectively with palladium or nickel and secondary metal ions to provide well-defined heterobimetallic compounds. These heterobimetallic complexes exhibit accelerated reaction rates and greater thermal stability in olefin polymerization compared to other catalysts.

Phosphine phosphonate and phenoxyphosphine ligands bearing polyethylene glycol (PEG) chains are used as described herein to produce heterobimetallic catalysts. The ligands can be metallated selectively with palladium or nickel and secondary metal ions to provide well-defined heterobimetallic compounds. These heterobimetallic complexes exhibit accelerated reaction rates and greater thermal stability in olefin polymerization compared to other catalysts.

A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R.sub.1—C(O)O—R.sub.2, wherein R.sub.1 is a C3-C6 alkyl group and R.sub.2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R.sub.1—C(O)O—R.sub.2, wherein R.sub.1 is a C3-C6 alkyl group and R.sub.2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.