A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): ##STR00001##
wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.sup.2.

Crosslinked polymers made up of polymerized units of cyclic diaminoalkane, aldehyde and bisphenol-S or melamine. A method for removing heavy metals, such as Pb(II) from an aqueous solution or an industrial wastewater sample with these crosslinked polymers is introduced. A process of synthesizing the crosslinked polymers is also described.

A conductive coating comprising polymers of meso-meso, β-β doubly linked fused and/or meso-β, β-meso doubly linked fused and/or meso-meso, β-β, β-β triply linked fused (poly)porphyrins. A method for forming on a substrate a thin conductive coating of polymers of meso-meso, β-β doubly and/or meso-β, β-meso doubly and/or meso-meso, β-β, β-β triply linked fused (poly)porphyrins, the method comprising the steps of providing a substrate in a vacuum chamber, performing on the substrate an oxidative chemical vapour deposition reaction with an oxidant and at least one porphyrin monomer.

A polymer, a hardmask composition, and a method of forming patterns, the polymer including structural units obtained by a reaction of a reaction mixture that includes a substituted or unsubstituted indole compound, a first aromatic aldehyde compound including a substituted or unsubstituted C3 to C20 branched alkyl group thereon, and a second aromatic aldehyde compound that is different from the first aromatic aldehyde compound.

A polymer, a hardmask composition, and a method of forming patterns, the polymer including structural units obtained by a reaction of a reaction mixture that includes a substituted or unsubstituted indole compound, a first aromatic aldehyde compound including a substituted or unsubstituted C3 to C20 branched alkyl group thereon, and a second aromatic aldehyde compound that is different from the first aromatic aldehyde compound.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):

##STR00001##

wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.sup.2.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):

##STR00001##

wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.sup.2.

Crosslinked polymers made up of polymerized units of cyclic diaminoalkane, aldehyde and bisphenol-S or melamine. A method for removing heavy metals, such as Pb(II) from an aqueous solution or an industrial wastewater sample with these crosslinked polymers is introduced. A process of synthesizing the crosslinked polymers is also described.

A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1): ##STR00001## The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1): ##STR00001## The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.