Polyester films with abrasion resistant coatings and methods for making the same are provided. The coated polyester films include a polyester film substrate having a coating on at least one side thereof, wherein the coating is derived from a coating composition that includes (i) a melamine crosslinker component and (ii) a polyurethane component derivable from at least one diisocyanate and at least one polymeric polyol.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): ##STR00001##
wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.sup.2.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): ##STR00001##
wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.sup.2.

Dicarbamates of the reduction products of 2-hydroxymethyl-5-furfural (HMF) and a method of preparing the same are described. The method involves reacting a mixture of an isohexide and a cynate salt in a non-aqueous solvent, with a miscible acid having a pKa of about 3.7 or less. The dicarbamates of HMF-reduction products can serve as precursor materials from which various derivative compounds can be synthesized.

Dicarbamates of the reduction products of 2-hydroxymethyl-5-furfural (HMF) and a method of preparing the same are described. The method involves reacting a mixture of an isohexide and a cynate salt in a non-aqueous solvent, with a miscible acid having a pKa of about 3.7 or less. The dicarbamates of HMF-reduction products can serve as precursor materials from which various derivative compounds can be synthesized.

A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.