The present invention discloses novel difunctional monomers compound containing pendant clickable furyl group of formula (I), process for the preparation and polymers prepared there from.

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wherein, X is selected from COOCH.sub.3, COOH, CON.sub.3, NCO, CONHNH.sub.2, CH.sub.2OH n is selected from 2 to 12.

The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring. The interlayer insulating film is formed using the positive type photosensitive siloxane composition without using a resist.

The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring. The interlayer insulating film is formed using the positive type photosensitive siloxane composition without using a resist.

Synthesis of triazole- and/or triazolium-based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising triazole- and/or triazolium-based polymers; and water. The use of the synthesized triazole- and/or triazolium-based polymers in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.

Synthesis of triazole- and/or triazolium-based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising triazole- and/or triazolium-based polymers; and water. The use of the synthesized triazole- and/or triazolium-based polymers in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.

A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

The present invention relates to fluorescent, benzotriazole-containing dye compounds, which possess high processability, desirable optical characteristics and good photostability, while suppressing the formation of a precipitate, and to dye polymers comprising the same. The present invention further relates to a wavelength-converting encapsulant composition comprising said dye polymer and to a photovoltaic module, which comprises a layer comprising said wavelength-converting encapsulant. The polymer fluorescent benzotriazole-containing dye compound is represented by general formula (I):

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where the variables are defined in the specification.

The present invention includes compositions comprising an alkyne-based substrate, an azide-based substrate, optionally a Cu(II) salt and optionally a photoinducible reducing agent. The present invention further includes a method of preparing composite materials that are suitable for use as dental implants using the compositions of the invention.

The present invention includes compositions comprising an alkyne-based substrate, an azide-based substrate, optionally a Cu(II) salt and optionally a photoinducible reducing agent. The present invention further includes a method of preparing composite materials that are suitable for use as dental implants using the compositions of the invention.