The present invention relates to a method for preparing a porous polymer film having a controlled pore depth, and a porous polymer film prepared thereby. A method for preparing a porous polymer film according to the present invention allows the pore depth of a porous film to be controlled simply and at a low cost, and thus allows adjustment of the light reflectance of the prepared film. A large-area film can be prepared by means of a simple method and thus can be applied to various industry fields. Films having different reflectance can be prepared and thus can be applied as low-reflection and high-reflection films for solar cells, and also as a low-reflection or high-reflection thin polymer film in the construction field or material and equipment field.

This polysiloxane: comprises a hydrolytic condensation product of a silicon compound that contains a cyclic alkoxysiloxane represented by formula (1) ##STR00001##
(in the formula, R.sup.1 groups each independently denote a substituted or unsubstituted alkyl group having 1-3 carbon atoms, R.sup.2 groups each independently denote a substituted or unsubstituted alkyl group having 1-6 carbon atoms, and n denotes an integer between 3 and 8); has at least two hydrosilylable carbon-carbon unsaturated groups per molecule; has at least two hydrosilyl groups per molecule; and in which the inequality 0.25≤t1<1 is satisfied, where t1 denotes the molar ratio of T units having a group represented by R.sup.1 relative to all siloxane units in the hydrolytic condensation product. The polysiloxane is addition crosslinkable, and is therefore suitable as a binder component of a heat-resistant paint or the like or as a coating material.

Provided is a primer composition and the preparation and use thereof. The primer composition comprises a silicone polyether, a reinforcing filler, one or more polydiorganosiloxane polymer(s), and a carrier. The primer composition is particularly designed for use with silicone elastomers, especially for addition (hydrosilylation) curing silicone elastomers. Also provided is a process for improving the adhesion of silicone elastomeric compositions to pre-cured silicone elastomer material substrates via the primer composition.

A silsesquioxane resin, photoresist composition comprising the silsesquioxane resin and a photoacid generator, etching mask composition comprising the silsesquioxane resin, products prepared therefrom, methods of making and using same, and manufactured articles and semiconductor devices containing same. The silsesquioxane resin comprises silicon-bonded hydrogen atom T-units and T-units having a silicon-bonded group of formula —CH.sub.2CH.sub.2CH.sub.2CO.sub.2C(R.sup.1a).sub.3 or —CH(CH.sub.3)CH.sub.2CO.sub.2C(R.sup.1a).sub.3, wherein each R.sup.1a is independently an unsubstituted (C.sub.1-C.sub.2)alkyl.

A cured product of a silanol composition comprising a cyclic silanol containing a silanol group and having a cyclic structure formed by a siloxane bond, and a dehydration condensation product thereof, wherein

an area ratio of a peak derived from SiO—H stretching observed at 2600 to 3800 cm.sup.−1 to an area of a peak derived from Si—O—Si stretching observed at 960 to 1220 cm.sup.−1 (SiO—H stretching/Si—O—Si stretching area ratio) is 0.01 or more in an IR spectrum.

A toner comprising a toner particle that contains a binder resin and fine particles A at the surface of the toner particle, wherein the fine particles A are organosilicon polymer fine particles, the organosilicon polymer fine particles have a number-average primary particle diameter of 30 nm to 500 nm, the organosilicon polymer fine particles have an attachment index for a polycarbonate film of not more than 3.5, the organosilicon polymer fine particles penetrate into the toner particle in a penetration depth b (nm), and protrude from the toner particle in a protrusion height c (nm), and b and c satisfy 0.05≤b/(b+c)≤0.40.

The present invention relates to novel siloxane oligomer and polymers and crosslinkable compositions, which may be used for the preparation of dielectric materials having excellent barrier, passivation and/or planarization properties. There is also provided a monomer composition from which the siloxane oligomers or polymers may be obtained and a method for preparing said siloxane oligomers or polymers. Beyond that, the present invention relates to a manufacturing method for preparing a microelectronic structure, wherein a crosslinkable composition is applied to a surface of a substrate and then cured, and to an electronic device comprising a microelectronic structure which is obtained by said manufacturing method.

Carbon-carbon unsaturated bond containing, halogen containing, and solubility-enhancer containing coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with carbon-carbon unsaturated bond-containing, halogen-containing, and solubility-enhancer containing polyhydrogensilsesquioxane resin solutions. Provided herein is also a method for patterning substrate coating of a polyhydrogensilsesquioxane containing a carbon-carbon unsaturated bond, halogen, and solubility-enhancer with radiation of light, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate.

The present invention relates to a selective process for the preparation of NCO-functionalized polyols, to their use in the preparation of silylated polyurethanes, to processes for preparing silylated polyurethanes and to silylated polyurethanes obtainable by a reaction of NCO-functionalized polyol with amino silane and to their use in CASE applications (coatings, adhesives, sealants and elastomers).

A dielectric property-lowering agent is composed of a specific epoxy-modified silicone resin having a low relative permittivity and a low dielectric loss tangent, and has an ionic species content of less than 0.001 wt %.