A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.

A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.

The present invention relates to a model material composition for shaping a model material by a material jetting optical shaping method, comprising a polymerizable compound, a photopolymerization initiator and a siloxane compound having one polymerizable group per molecule, the siloxane compound having a number average molecular weight of 300 to 10,000.

The present invention relates to a model material composition for shaping a model material by a material jetting optical shaping method, comprising a polymerizable compound, a photopolymerization initiator and a siloxane compound having one polymerizable group per molecule, the siloxane compound having a number average molecular weight of 300 to 10,000.

The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

A polymeric polymerization initiator represented by the following formula (I). M.sup.1.sub.aM.sup.2.sub.bD.sup.1.sub.cD.sup.2.sub.dT.sup.1.sub.eT.sup.2.sub.fQ.sub.g (I) M.sup.1=R.sup.1.sub.3SiO.sub.1/2 M.sup.2=R.sup.1.sub.2R.sup.2SiO.sub.1/2 D.sup.1=R.sup.1.sub.2SiO.sub.2/2 D.sup.2=R.sup.1R.sup.2SiO.sub.2/2 T.sup.1=R.sup.1SiO.sub.3/2 T.sup.2=R.sup.2SiO.sub.3/2 Q=SiO.sub.4/2 [R.sup.1 represents a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group. R.sup.2 represents a group having a ketene silyl acetal structure represented by the following formula (II). (A represents a single bond or a divalent organic group, R.sup.3 represents a hydrogen atom or a substituted or unsubstituted alkyl group, and R.sup.4 represents a substituted or unsubstituted alkyl group.) “a”, “b”, “c”, “d”, “e”, “f”, and “g” represent 0 or a positive integer where b+d+f≥1. An order of bonding of siloxane units is optionally determined.] ##STR00001##

A polymeric polymerization initiator represented by the following formula (I). M.sup.1.sub.aM.sup.2.sub.bD.sup.1.sub.cD.sup.2.sub.dT.sup.1.sub.eT.sup.2.sub.fQ.sub.g (I) M.sup.1=R.sup.1.sub.3SiO.sub.1/2 M.sup.2=R.sup.1.sub.2R.sup.2SiO.sub.1/2 D.sup.1=R.sup.1.sub.2SiO.sub.2/2 D.sup.2=R.sup.1R.sup.2SiO.sub.2/2 T.sup.1=R.sup.1SiO.sub.3/2 T.sup.2=R.sup.2SiO.sub.3/2 Q=SiO.sub.4/2 [R.sup.1 represents a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group. R.sup.2 represents a group having a ketene silyl acetal structure represented by the following formula (II). (A represents a single bond or a divalent organic group, R.sup.3 represents a hydrogen atom or a substituted or unsubstituted alkyl group, and R.sup.4 represents a substituted or unsubstituted alkyl group.) “a”, “b”, “c”, “d”, “e”, “f”, and “g” represent 0 or a positive integer where b+d+f≥1. An order of bonding of siloxane units is optionally determined.] ##STR00001##

A method of making a polysilylether (PSE) polymer includes: cooling a solution of diethylamine to 0° C. under argon; adding cold dialkyldichlorosilane to form a first mixture; slowly warming the first mixture to form dialkylbis(diethylamino)silane; diluting the first mixture with hexane then filtering via cannula; evaporating the hexane and excess diethylamine; purifying the dialkylbis(diethylamino)silane under vacuum distillation; adding the dialkylbis(diethylamino)silane to a solution of diol dissolved in tetrahydrofuran to form a second mixture; heating the second mixture to 60° C. while reflux condensing, and cooling and concentrating the second mixture under vacuum to form a resultant mixture containing the polysilylether (PSE) polymer.

A method of making a polysilylether (PSE) polymer includes: cooling a solution of diethylamine to 0° C. under argon; adding cold dialkyldichlorosilane to form a first mixture; slowly warming the first mixture to form dialkylbis(diethylamino)silane; diluting the first mixture with hexane then filtering via cannula; evaporating the hexane and excess diethylamine; purifying the dialkylbis(diethylamino)silane under vacuum distillation; adding the dialkylbis(diethylamino)silane to a solution of diol dissolved in tetrahydrofuran to form a second mixture; heating the second mixture to 60° C. while reflux condensing, and cooling and concentrating the second mixture under vacuum to form a resultant mixture containing the polysilylether (PSE) polymer.