An osmium-containing conjugated polymer and methods thereof. A structural formula of the osmium-containing conjugated polymer is formula I, a reaction formula of the osmium-containing conjugated polymer is a formula II.

The present disclosure relates to synthesis of porous polymer networks and applications of such materials. The present disclosure relates to a method of fabricating of a porous polymer network comprising: (a) providing: (i) a first reactant comprising a plurality of compounds comprising at least one acetyl group, said plurality of compounds comprising at least one compound type, and (ii) a second reactant comprising an alkylsulfonic acid, and (b) creating a solution of said reactants, (c) casting said solution in a form, and (d) treating said solution under such conditions so as to produce a porous polymer network. In one embodiment, the invention relates to a porous polymer network which has a basic structure selected from the group consisting of ##STR00001##

Free-standing non-fouling polymers and polymeric compositions, monomers and macromonomers for making the polymers and polymeric compositions, objects made from the polymers and polymeric compositions, and methods for making and using the polymers and polymeric compositions.

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Irradiating a film of a thiophene polymer that is a pure organic compound with light allows the thiophene polymer film to act as a light absorber and catalyst that produces hydrogen peroxide from water and water-dissolved air (oxygen) at extremely high efficiency, and this film can work in alkaline water in which a film of a general-purpose inexpensive water-oxidizing catalyst, which is used as a counter electrode, is active. Provided is an environmentally compatible and simple method for producing hydrogen peroxide at extremely high efficiency, including combining a film of a catalyst for light absorption and oxygen reduction that consists of a thiophene polymer with a catalyst for water oxidation, immersing the combination in alkaline water, and irradiating the light-absorbing oxygen reduction catalyst film with light.

Water-soluble photoactive polymers, included polymer tandem dyes, as described as well as methods for their preparation and use. The photoactive polymers can be prepared by direct modification of core polymers (e.g., violet excitable polymers) with dyes or other functional groups. Methods of detecting analytes using the polymers are also described.

The present disclosure relates to a composition that includes ##STR00001##
where R.sub.1 and R.sub.2 include at least one of a hydrogen, a hydroxyl group, and/or an alkyl group, R.sub.3 and R.sub.4 include at least one of hydrogen, a hydroxyl group, an alkyl group, and/or a ketone, and 1≤n≤2000.

According to the present invention, options for materials for organic devices such as materials for organic EL elements are increased by addition of a cycloalkane, by condensation, to a polycyclic aromatic compound in which a plurality of aromatic rings are linked together by boron atoms, oxygen atoms, and the like. By using a novel cycloalkane-condensed polycyclic aromatic compound as a material for an organic EL element, for example, an organic EL element having excellent emission efficiency and element life is provided.

A liquid lens including (i) a first liquid and a second liquid disposed within a containment region, the first liquid and the second liquid forming an interface between the first liquid and the second liquid; (ii) an electrode; and (iii) an insulating layer separating the electrode from the first liquid and the second liquid, the insulating layer comprising a polymeric material and a slippery omniphobic covalently attached liquid that is chemically bonded to the polymeric material, the slippery omniphobic covalently attached liquid providing a surface contacting one or more of the first liquid and the second liquid. The polymeric material of the insulating layer can be a poly(para-xylylene). The slippery omniphobic covalently attached liquid can include units of a silicone or polyolefin, each unit individually bound to a repeating unit of the polymeric material. A liquid lens where the insulating layer has a quality factor at least 200.

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode and a second electrode facing each other; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron transporting layer positioned between the QD emitting material layer and the second electrode and including an electron-property material and a hole-property material.