A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50 C. lower than the baking temperature is substantially controlled to 0.5 to 5 C./min in range is provided.

A method of forming a polymer comprising a conjugated backbone and side-groups pendant from the conjugated backbone wherein the method comprises the steps of: polymerising one or more monomers to form a precursor polymer comprising the conjugated backbone and precursor groups pendant from the conjugated backbone, and subsequently converting the precursor groups to the side-groups.

The present disclosure provides new materials that combine the advantages of well-defined polymeric starting materials and the convenience of surface modification by physical methods into one package and, thus, offers a general and powerful platform suitable for use in numerous applications.

A resin composition is provided and contains a maleimide compound, a polyphenylene ether compound having an unsaturated double bond in the molecule, a phosphorus-containing compound having a group represented by the following Formula (1) and a group containing a phosphorus atom in the molecule, and a curing agent. ##STR00001## In Formula (1), R.sub.1 represents a hydrogen atom or an alkyl group.