C08K5/45

(BI)METAL SULFIDE POLYMER COMPOSITE MATERIAL, AND ITS USE AS CATALYST FOR HYDROGEN PRODUCTION

A composite material made of an amorphous (bi)metal sulfide nanoparticles directly linked, through coordinate covalent bonds, to a sulfur-containing polymer and a method of preparation of the composite material. The composite material can also be used as a catalyst for hydrogen production. Finally, a proton-exchange membrane (PEM) electrolyser and a photoelectrochemical cell, can both including the composite material.

COMPOSITION CONTAINING ORGANIC SEMICONDUCTOR, SOLUTION FOR FORMING ORGANIC SEMICONDUCTOR LAYER, ORGANIC SEMICONDUCTOR LAYER, AND ORGANIC THIN FILM TRANSISTOR
20220059768 · 2022-02-24 · ·

Provided are (i) a solution for forming an organic semiconductor layer which solution has an excellent coating property, (ii) an organic semiconductor which is produced with use of the solution and which has high heat resistance, (iii) a layer which contains the organic semiconductor, and (iv) an organic thin film transistor which exhibits high electrical properties. A composition containing: an organic semiconductor; and a polymer (1) having at least one unit selected from the group consisting of units represented by formulae (1-a), (1-b), and (1-c). A composition containing the organic semiconductor, the polymer (1), and an organic solvent can be suitably used as a solution for forming an organic semiconductor layer.

COMPOSITION CONTAINING ORGANIC SEMICONDUCTOR, SOLUTION FOR FORMING ORGANIC SEMICONDUCTOR LAYER, ORGANIC SEMICONDUCTOR LAYER, AND ORGANIC THIN FILM TRANSISTOR
20220059768 · 2022-02-24 · ·

Provided are (i) a solution for forming an organic semiconductor layer which solution has an excellent coating property, (ii) an organic semiconductor which is produced with use of the solution and which has high heat resistance, (iii) a layer which contains the organic semiconductor, and (iv) an organic thin film transistor which exhibits high electrical properties. A composition containing: an organic semiconductor; and a polymer (1) having at least one unit selected from the group consisting of units represented by formulae (1-a), (1-b), and (1-c). A composition containing the organic semiconductor, the polymer (1), and an organic solvent can be suitably used as a solution for forming an organic semiconductor layer.

ORGANIC SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, COMPOUND, AND OLIGOMER OR POLYMER
20170250345 · 2017-08-31 ·

An object is to provide an organic semiconductor element having excellent carrier mobility and heat resistance of a semiconductor active layer, an organic semiconductor composition for obtaining this element, an organic semiconductor film, and a method of manufacturing an organic semiconductor element in which the composition is used, and another object is to provide a compound and an oligomer or a polymer that are suitably used in the organic semiconductor element, the organic semiconductor composition, the organic semiconductor film, and the method of manufacturing an organic semiconductor element.

The organic semiconductor element of the present invention includes a compound represented by Formula 1 below in a semiconductor active layer. In Formula 1, X represents a chalcogen atom, p and q each independently represent an integer of 0 to 2, and R.sup.1 and R.sup.2 each independently represent a halogen atom or a group represented by Formula W below.

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Phase change inks containing wax-soluble near-infrared dyes

Phase change ink compositions having a phase change carrier composition containing a wax and a wax-soluble near-infrared (NIR) dye having an absorption maximum in the wavelength region from about 700 nm to about 1400 nm. Near-infrared prints prepared with such phase change ink compositions. Methods of producing a layer of such a phase change ink on the surface of a substrate.

Phase change inks containing wax-soluble near-infrared dyes

Phase change ink compositions having a phase change carrier composition containing a wax and a wax-soluble near-infrared (NIR) dye having an absorption maximum in the wavelength region from about 700 nm to about 1400 nm. Near-infrared prints prepared with such phase change ink compositions. Methods of producing a layer of such a phase change ink on the surface of a substrate.

POLYOLEFIN COMPOSITION PROVIDING MARKING BY FLUORESCENCE
20220306834 · 2022-09-29 ·

The present invention is directed to a polyolefin composition comprising carbon black which shows fluorescence when irradiated with UV light. The polyolefin composition of the present invention comprises a polyolefin, carbon black in an amount of 0.25 to 1.0 wt %, an optical brightener in an amount of 0.001 to 0.1 wt %, and a UV agent.

The present invention is further directed to a molded article comprising the polyolefin composition of the present invention. The present invention is further directed to a wire or cable comprising an outer layer comprising the polyolefin composition of the present invention. Finally, the present invention is directed to a method for detection of a polyolefin composition by UV light and to a method for detection of a molded article or a wire or cable by UV light.

POLYOLEFIN COMPOSITION PROVIDING MARKING BY FLUORESCENCE
20220306834 · 2022-09-29 ·

The present invention is directed to a polyolefin composition comprising carbon black which shows fluorescence when irradiated with UV light. The polyolefin composition of the present invention comprises a polyolefin, carbon black in an amount of 0.25 to 1.0 wt %, an optical brightener in an amount of 0.001 to 0.1 wt %, and a UV agent.

The present invention is further directed to a molded article comprising the polyolefin composition of the present invention. The present invention is further directed to a wire or cable comprising an outer layer comprising the polyolefin composition of the present invention. Finally, the present invention is directed to a method for detection of a polyolefin composition by UV light and to a method for detection of a molded article or a wire or cable by UV light.

Near infrared absorbing composition, film, infrared cut filter, solid image pickup element, infrared absorber, and compound

A near infrared absorbing composition includes: a squarylium compound represented by the following Formula (1) and having an absorption maximum of 700 nm or longer; and a resin. In Formula (1), Ar.sup.1 and Ar.sup.2 each independently represent a divalent conjugated group which has a heteroaryl ring having a chalcogen atom, and R.sup.1 to R.sup.4 each independently represent a hydrogen atom or a substituent. The film and the infrared cut filter are formed of the near infrared absorbing composition. The solid image pickup element includes the infrared cut filter. ##STR00001##

Near infrared absorbing composition, film, infrared cut filter, solid image pickup element, infrared absorber, and compound

A near infrared absorbing composition includes: a squarylium compound represented by the following Formula (1) and having an absorption maximum of 700 nm or longer; and a resin. In Formula (1), Ar.sup.1 and Ar.sup.2 each independently represent a divalent conjugated group which has a heteroaryl ring having a chalcogen atom, and R.sup.1 to R.sup.4 each independently represent a hydrogen atom or a substituent. The film and the infrared cut filter are formed of the near infrared absorbing composition. The solid image pickup element includes the infrared cut filter. ##STR00001##