Methods for forming a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C.sub.3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acrylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

A skin effect heating system for long pipelines includes a heater cable disposed in a ferromagnetic or other conductive heat tube. A semiconductive jacket contacts the inner surface of the heat tube, where the charge density of the return current carried by the heat tube is at its highest. The semiconductive jacket material has a resistivity that is sufficiently low to reduce or eliminate arcing events such as corona discharge by allowing accumulated charge on the heat tube to dissipate. The resistivity is also high enough to prevent the return current from flowing into or through the semiconductive outer layer, so that heat production capacity of the system is maximized.

A skin effect heating system for long pipelines includes a heater cable disposed in a ferromagnetic or other conductive heat tube. A semiconductive jacket contacts the inner surface of the heat tube, where the charge density of the return current carried by the heat tube is at its highest. The semiconductive jacket material has a resistivity that is sufficiently low to reduce or eliminate arcing events such as corona discharge by allowing accumulated charge on the heat tube to dissipate. The resistivity is also high enough to prevent the return current from flowing into or through the semiconductive outer layer, so that heat production capacity of the system is maximized.

The present invention provides a chlorine-containing resin composition capable of providing a processed product that is excellent in thermal stability and heat resistance and that has various excellent properties derived from the chlorine-containing resin in an efficient, easy, simple, and high-yield manner, without degrading the appearance of the processed product. The present invention also provides a method for providing such a processed product. The present invention relates to a chlorine-containing resin composition containing a chlorine-containing resin, a hydrotalcite powder, and organic acid zinc, wherein the hydrotalcite powder contains magnesium (Mg) and/or zinc (Zn), and aluminum (Al), the molar ratio of the total amount of magnesium and zinc to the amount of aluminum ((Mg+Zn)/Al) is 2.20 or less, and the hydrotalcite powder has an oil absorption of 30 ml/100 g or less.

The present invention provides a chlorine-containing resin composition capable of providing a processed product that is excellent in thermal stability and heat resistance and that has various excellent properties derived from the chlorine-containing resin in an efficient, easy, simple, and high-yield manner, without degrading the appearance of the processed product. The present invention also provides a method for providing such a processed product. The present invention relates to a chlorine-containing resin composition containing a chlorine-containing resin, a hydrotalcite powder, and organic acid zinc, wherein the hydrotalcite powder contains magnesium (Mg) and/or zinc (Zn), and aluminum (Al), the molar ratio of the total amount of magnesium and zinc to the amount of aluminum ((Mg+Zn)/Al) is 2.20 or less, and the hydrotalcite powder has an oil absorption of 30 ml/100 g or less.

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,

A=([H]0.04+[C]1.0+[N]2.1+[0]3.6+[F]5.6+[S]1.5+[I]39.5)/([H]1+[C]12+[N]14+[0]16+[F]19+[S]32+[I]127)Formula (1): Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,

A=([H]0.04+[C]1.0+[N]2.1+[0]3.6+[F]5.6+[S]1.5+[I]39.5)/([H]1+[C]12+[N]14+[0]16+[F]19+[S]32+[I]127)Formula (1): Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and/or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.

A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and/or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.

Described herein is a pressure sensitive adhesive comprising a high molecular weight fluorinated polymer having a Tg less than about 0 C. and a number average molecular weight greater than about 20 kilograms/mole; and a low molecular weight fluorinated polymer derived from an ethylenically unsaturated fluorinated monomer, wherein the low molecular weight fluorinated polymer has a Tg greater than about 15 C. and a number average molecular weight less than about 18 kilograms/mole. Also described herein are articles comprising the pressure sensitive adhesive composition.