Electronic telecommunication articles are described comprising a crosslinked fluoropolymer layer. In typical embodiments, the crosslinked fluoropolymer layer is a substrate, patterned (e.g. photoresist) layer, insulating layer, passivation layer, cladding, protective layer, or a combination thereof. Also describes are methods of making an electronic telecommunications article and method of forming a patterned fluoropolymer layer. The fluoropolymer preferably comprises at least 80, 85, or 90% by weight of polymerized units of perfluorinated monomers and cure sites selected from nitrile, iodine, bromine, and chlorine. Illustrative electronic communication articles include integrated circuits, printed circuit boards, antennas, and optical fiber cables. Fluoropolymer compositions are also described.

An epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the epoxy resin composition, the epoxy resin composition including an epoxy resin; a curing agent; an inorganic filler; and a curing catalyst, the epoxy resin including an epoxy resin represented by Formula 1: ##STR00001##

A resin composition for a PCB includes a styrene-butadiene-styrene block copolymer in an amount from 95 to 100 parts by weight, a modified porous spheres of silicon oxide in an amount from 1 to 50 parts by weight, and a liquid polybutadiene in an amount from 5 to 50 parts by weight. The styrene-butadiene-styrene block copolymer and the liquid polybutadiene both include vinyl groups on the molecular side chains. The modified porous spheres of silicon oxide also include vinyl groups. An adhesive film and a circuit board using the resin composition are also provided.

The present invention provides a resin composition comprising: (A) 100 parts by weight of epoxy resin; (B) from 10 to 80 parts by weight of benzoxazine resin; (C) from 10 to 50 parts by weight of dicyclopentadiene phenol resin; and (D) from 0.5 to 5 parts by weight of amine hardener; wherein the resin composition is free of diallyl bisphenol A (DABPA).

A curable composition comprises: at least one aliphatic carbosilane having m Si—H groups, at least one aliphatic carbosilane having n vinyl groups, and at least one hydrosilylation reaction catalyst. m is an integer greater than or equal to 2, n is an integer greater than or equal to 2, and m+n is at least 5. A cured reaction product and an electronic article including the same are also disclosed.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

ABA type block copolymers as a new class of temperature sensing polymers with tunable, high temperature coefficient of resistance (TCR). A sensor includes a heater, a thermal insulator between two thermometer layers, the heater generating a thermal gradient within the thermal insulator. The thermometers give an indirect measurement of fluid flow around the sensor, based on their temperature readings. The thermometers are flexible layers including ABA block polymers.

A polyolefin composition is foamed by a process in which a nucleator is used, and the nucleator comprises 80% or more of unagglomerated fluororesin particles and/or agglomerates of fluororesin particles in which both the unagglomerated particles and the agglomerates are less than 1 μm in size.

A polyolefin composition is foamed by a process in which a nucleator is used, and the nucleator comprises 80% or more of unagglomerated fluororesin particles and/or agglomerates of fluororesin particles in which both the unagglomerated particles and the agglomerates are less than 1 μm in size.

Provided is an encapsulation method not causing molding failures such as filling failures and flow marks when collectively encapsulating a large-area silicon wafer or substrate with a resin composition. Specifically, provided is a method for encapsulating a semiconductor element-mounted base material, using a curable epoxy resin composition containing: an epoxy resin (A), a curing agent (B), a pre-gelatinizing agent (C) and a filler (D). The semiconductor element-mounted base material is collectively encapsulated under conditions of (a) molding method: compression molding, (b) molding temperature: 100 to 175° C., (c) molding period: 2 to 20 min and (d) molding pressure: 50 to 350 kN.