Provided are a resist composition that can improve coatability (coating film formability) with respect to a substrate in spin coating and close adherence of a resist film and that can form a good pattern, and a resist film in which a good pattern is formed. The resist composition contains a polymer, a solvent, and an aromatic vinyl monomer, and has a content of the aromatic vinyl monomer relative to the polymer of not less than 10 mass ppm and not more than 30,000 mass ppm.

A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), R.sup.1 is an organic group including 3 to 7 fluorine atoms. In formula (II), R.sup.2 is a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, R.sup.3 is a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

##STR00001##

A resin composition contains a maleimide compound (A), a cyanate ester compound (B), a polyphenylene ether compound (C) with a number average molecular weight of not lower than 1000 and not higher than 7000 and represented by Formula (1), and a block copolymer (D) having a styrene backbone. In Formula (1), X represents an aryl group; (YO)n.sub.2- represents a polyphenylene ether moiety; R.sub.1, R.sub.2, and R.sub.3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group; n.sub.2 represents an integer of from 1 to 100; n.sub.1 represents an integer of from 1 to 6; and n.sub.3 represents an integer of from 1 to 4.

##STR00001##

A resin composition contains a maleimide compound (A), a cyanate ester compound (B), a polyphenylene ether compound (C) with a number average molecular weight of not lower than 1000 and not higher than 7000 and represented by Formula (1), and a block copolymer (D) having a styrene backbone. In Formula (1), X represents an aryl group; (YO)n.sub.2- represents a polyphenylene ether moiety; R.sub.1, R.sub.2, and R.sub.3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group; n.sub.2 represents an integer of from 1 to 100; n.sub.1 represents an integer of from 1 to 6; and n.sub.3 represents an integer of from 1 to 4.

##STR00001##

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R.sup.1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R.sup.3 indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

##STR00001##

The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3

##STR00001##

for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3

##STR00001##

for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 ##STR00001##
for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.