In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

An encapsulant composition and a film are provided. The encapsulant composition includes 20-45 parts by weight of a component (A), 55-80 parts by weight of a component (B) and a component (C). The total weight of the component (A) and the component (B) is 100 parts by weight, and the weight ratio of the component (C) to the component (A) is 1:100 to 5:100. The component (A) includes first compound (A-1) and second compound (A-2), the component (B) is a non-modified inorganic powder or modified inorganic powder, and the component (C) is an initiator. The first compound (A-1) has structure represented by Formula (I) or Formula (II), and the second compound (A-2) is a monoalkenyl aromatic compound

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, a, b, c, d, e and f are as defined in the specification.

An encapsulant composition and a film are provided. The encapsulant composition includes 20-45 parts by weight of a component (A), 55-80 parts by weight of a component (B) and a component (C). The total weight of the component (A) and the component (B) is 100 parts by weight, and the weight ratio of the component (C) to the component (A) is 1:100 to 5:100. The component (A) includes first compound (A-1) and second compound (A-2), the component (B) is a non-modified inorganic powder or modified inorganic powder, and the component (C) is an initiator. The first compound (A-1) has structure represented by Formula (I) or Formula (II), and the second compound (A-2) is a monoalkenyl aromatic compound

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, a, b, c, d, e and f are as defined in the specification.

The present invention provides a low temperature polymerizing and curing polymer composition comprising, in copolymerized form, one or more addition polymerizable arylcyclobutene monomers A having as a cyclobutene ring substituent one or more groups chosen from alkyl; heteroatom containing alkyl; aryl; heteroatom containing aryl; or heteroatom containing aryloxy, one or more aromatic addition polymerizable second monomers, and one or more other addition polymerizable monomers chosen from an addition polymerizable nitrogen heterocycle containing third monomer, an addition polymerizable fourth monomer, or, preferably, both of the one or more third monomers and the one or more fourth monomers. The polymer compositions find use in making films or coatings for use in electronics applications.

Resin composition, insulating resin film and use thereof. The resin composition comprises the following components in parts by mass: 50-90 parts of a hydrogenated hydrocarbon resin and 10-50 parts of a benzocyclobutene resin; the benzocyclobutene resin comprises at least one structural unit A and at least one structural unit B. The hydrogenated hydrocarbon resin and the benzocyclobutene resin with a specific structure are both total-hydrocarbon structures, having low dielectric constant Dk, dielectric loss tangent Df, and water absorption rate. The benzocyclobutene resin can be thermally cured to obtain the high cross-linking density, high glass transition temperature, and excellent heat resistance. The resin composition and the insulating resin film prepared therewith have ultra-low dielectric constant and loss tangent, excellent dielectric properties, heat resistance, damp heat resistance, adhesion strength, and excellent mechanical properties such as flexibility, satisfying the performance requirements of electronic components being high frequency, high speed, and high integration.

Resin composition, insulating resin film and use thereof. The resin composition comprises the following components in parts by mass: 50-90 parts of a hydrogenated hydrocarbon resin and 10-50 parts of a benzocyclobutene resin; the benzocyclobutene resin comprises at least one structural unit A and at least one structural unit B. The hydrogenated hydrocarbon resin and the benzocyclobutene resin with a specific structure are both total-hydrocarbon structures, having low dielectric constant Dk, dielectric loss tangent Df, and water absorption rate. The benzocyclobutene resin can be thermally cured to obtain the high cross-linking density, high glass transition temperature, and excellent heat resistance. The resin composition and the insulating resin film prepared therewith have ultra-low dielectric constant and loss tangent, excellent dielectric properties, heat resistance, damp heat resistance, adhesion strength, and excellent mechanical properties such as flexibility, satisfying the performance requirements of electronic components being high frequency, high speed, and high integration.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.