Methods of temporarily enhancing the luster and/or brilliance of a piece of jewelry, a gem stone, or a piece of jewelry including a gem stone including applying a non-aqueous composition to the piece of jewelry, the gem stone, or the piece of jewelry including a gem stone.

Methods of temporarily enhancing the luster and/or brilliance of a piece of jewelry, a gem stone, or a piece of jewelry including a gem stone including applying a non-aqueous composition to the piece of jewelry, the gem stone, or the piece of jewelry including a gem stone.

A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H.sub.2O.sub.2), ammonium persulfate ((NH.sub.4).sub.2S.sub.2O.sub.8), peroxymonosulfuric acid (H.sub.2SO.sub.5), ozone (O.sub.3) in de-ionized water, and sulfuric acid (H.sub.2SO.sub.4).

A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H.sub.2O.sub.2), ammonium persulfate ((NH.sub.4).sub.2S.sub.2O.sub.8), peroxymonosulfuric acid (H.sub.2SO.sub.5), ozone (O.sub.3) in de-ionized water, and sulfuric acid (H.sub.2SO.sub.4).

A method for performing a Chemical Mechanical Polishing (CMP) process includes applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive to change a bonding structure on the surface of the hardened fluid material. The method further includes polishing the surface of the hardened fluid material with a polishing head.

A semiconductor process polishing composition, and a polishing method of a substrate applied with a polishing composition are provided. The process provides a polishing composition improved in the polishing rate, selectivity and dispersibility, and provides a manufacturing method of a substrate that is polished by applying such a polishing composition for a semiconductor process.

Methods of temporarily enhancing the luster and/or brilliance of a piece of jewelry, a gem stone, or a piece of jewelry including a gem stone including applying a non-aqueous composition to the piece of jewelry, the gem stone, or the piece of jewelry including a gem stone.

Methods of temporarily enhancing the luster and/or brilliance of a piece of jewelry, a gem stone, or a piece of jewelry including a gem stone including applying a non-aqueous composition to the piece of jewelry, the gem stone, or the piece of jewelry including a gem stone.