The present disclosure relates to a metal particle-containing composition contains at least one thermosetting resin (R), a hardening agent (H), and at least three types of metal particles (P) different from one another. The metal particles (P) contain a solder alloy particle (P1) containing a tin alloy containing at least one metal (A), wherein the metal (A) is a metal that forms a eutectic crystal with tin at a eutectic temperature of 200° C. or lower, at least one metal particle (P2) containing a metal (B) having a melting point exceeding 420° C. in a bulk, the metal particle (P2) having a melting point higher than a solidus temperature of the solder alloy particle (P1), and at least one metal particle (P3) containing a metal (C) that forms an intermetallic compound with a metal contained in the solder alloy particle (P1).

A multilayer structure for transporting hydrogen, including, from the inside, a sealing layer and at least one composite reinforcement layer, an innermost composite reinforcement layer being wound around the sealing layer, the sealing layer being a composition predominantly of: a polyamide thermoplastic polymer PA11, up to less than 15% by weight of impact modifier, up to 1.5% by weight of plasticizer relative to the total weight of the composition, the composition being devoid of nucleating agent and of polyether block amide (PEBA), and at least one of the composite reinforcement layers being a fibrous material in the form of continuous fibers, which is impregnated with a composition predominantly of at least one polymer P2j, (j=1 to m, m being the number of reinforcement layers), the structure being devoid of an outermost layer and adjacent to the outermost layer of a composite reinforcement layer made of a polyamide polymer.

A multilayer structure for transporting hydrogen, including, from the inside, a sealing layer and at least one composite reinforcement layer, an innermost composite reinforcement layer being wound around the sealing layer, the sealing layer being a composition predominantly of: a polyamide thermoplastic polymer PA11, up to less than 15% by weight of impact modifier, up to 1.5% by weight of plasticizer relative to the total weight of the composition, the composition being devoid of nucleating agent and of polyether block amide (PEBA), and at least one of the composite reinforcement layers being a fibrous material in the form of continuous fibers, which is impregnated with a composition predominantly of at least one polymer P2j, (j=1 to m, m being the number of reinforcement layers), the structure being devoid of an outermost layer and adjacent to the outermost layer of a composite reinforcement layer made of a polyamide polymer.

Phthalonitrile adhesive formulations are provided. Such an adhesive formulation may comprise an etherimide-phthalonitrile oligomer having formula

##STR00001## wherein R.sub.1 is an unsubstituted or substituted aryl group or an unsubstituted or substituted cycloalkyl group; R.sub.2 is an unsubstituted or substituted aryl group and n has a value of from 1 to 30. Also provided are methods of making and using the adhesive formulations.

Phthalonitrile adhesive formulations are provided. Such an adhesive formulation may comprise an etherimide-phthalonitrile oligomer having formula

##STR00001## wherein R.sub.1 is an unsubstituted or substituted aryl group or an unsubstituted or substituted cycloalkyl group; R.sub.2 is an unsubstituted or substituted aryl group and n has a value of from 1 to 30. Also provided are methods of making and using the adhesive formulations.

A temporary protective film for semiconductor encapsulation molding, the temporary protective film including a support film, an adhesive layer provided on one surface of the support film, and a non-adhesive layer provided on a surface of the support film on an opposite side from the surface provided with the adhesive layer. The thickness of the non-adhesive layer is 10 μm or less. A surface of the non-adhesive layer on an opposite side of a surface in contact with the support film, has a surface roughness Ra of 0.1 μm or more.

A temporary protective film for semiconductor encapsulation molding, the temporary protective film including a support film, an adhesive layer provided on one surface of the support film, and a non-adhesive layer provided on a surface of the support film on an opposite side from the surface provided with the adhesive layer. The thickness of the non-adhesive layer is 10 μm or less. A surface of the non-adhesive layer on an opposite side of a surface in contact with the support film, has a surface roughness Ra of 0.1 μm or more.

A composition exhibits excellent heat resistance and mounting reliability when bonding a semiconductor power element to a metal lead frame, which is also free of lead and thereby places little burden on the environment. An electrically conductive composition contains at least a sulfide compound represented by R—S—R′ (wherein R is an organic group containing at least carbon; R′ is an organic group that is the same as or different from R; and R and R′ may be bonded to each other to form a so-called cyclic sulfide) and metal particles containing at least Cu, Sn or Ni as its essential component. Further, a conductive paste and a conductive bonding film each are produced using the electrically conductive composition. A dicing die bonding film is obtained by bonding the conductive bonding film with an adhesive tape.

A composition exhibits excellent heat resistance and mounting reliability when bonding a semiconductor power element to a metal lead frame, which is also free of lead and thereby places little burden on the environment. An electrically conductive composition contains at least a sulfide compound represented by R—S—R′ (wherein R is an organic group containing at least carbon; R′ is an organic group that is the same as or different from R; and R and R′ may be bonded to each other to form a so-called cyclic sulfide) and metal particles containing at least Cu, Sn or Ni as its essential component. Further, a conductive paste and a conductive bonding film each are produced using the electrically conductive composition. A dicing die bonding film is obtained by bonding the conductive bonding film with an adhesive tape.

A high temperature resistant polyimide film and its preparation method. The present invention relates to a polyimide film and its preparation method and solves the problems of honeycomb's and skin panel's core adhesive-polyimide film with insufficient heat resistance, no climbing of bonding core structure and adhesive fillet formation. The high temperature resistant polyimide film is made by polyimide solution, inorganic filler modifier and interface coupling agent by the steps of: under specific temperature and stirring conditions, adding inorganic filler modifier and interface coupling agent to polyimide solution, stirring to obtain the adhesive agent; filtering and degassing the adhesive agent, casting to a stainless steel drum with carrier cloth and release paper to obtain a self-supporting film; then heating and annealing to obtain the final polyimide film. The present invention is applied to high temperature resistant polyimide film and its preparation method.