A cubic boron nitride sintered body including cubic boron nitride and a binder phase, wherein a content of the cubic boron nitride is 40 volume % or more and 80 volume % or less; a content of the binder phase is 20 volume % or more and 60 volume % or less; an average particle size of the cubic boron nitride is 0.5 μm or more and 4.0 μm or less; the binder phase contains TiC and TiB.sub.2 and contains substantially no AlN and/or Al.sub.2O.sub.3; a (101) plane of TiB.sub.2 in the binder phase shows a maximum peak position (2θ) in X-ray diffraction of 44.2° or more; and a (200) plane of TiC in the binder phase shows a maximum peak position (2θ) in X-ray diffraction of less than 42.1°.

Magnetizable abrasive particles are described comprising ceramic particles having outer surfaces comprising a coating of unsintered polyion and magnetic particles bonded to the polyion. In favored embodiments, the magnetic particles have a magnetic saturation of at least 10, 15, 20, 25, 30, 35, 40, 45 or 50 emu/gram. In another embodiment, an abrasive article is described comprising a plurality of magnetizable abrasive particles as described herein retained in a binder material. Also described are method of making magnetizable abrasive particles and methods of making an abrasive article comprising magnetizable abrasive particles.

The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

A CMP slurry composition for polishing a boron silicon (B—Si) compound may include a catalyst, an abrasive including a plurality of particles and being configured to polish the boron silicon (B—Si) compound, and a pH adjuster. The CMP slurry composition may further include an oxidizer. The catalyst may have a binary catalyst configuration comprising a first catalyst material and a second catalyst material. The first catalyst material may include Fe, and the second catalyst material may include Cu. The oxidizer may include hydrogen peroxide (H.sub.2O.sub.2). A CMP (chemical mechanical polishing) method for a boron silicon (B—Si) compound may include providing a substrate structure including a thin film formed of the boron silicon (B—Si) compound and performing a CMP process on the thin film. The CMP process is performed by using the CMP slurry composition.

A method for producing endless abrasive articles (100) comprises: —providing a mandrel coil (200), which comprises a first complete turn (BO.sub.A) formed of an endless mandrel belt (BO), —feeding the endless mandrel belt (BO) to an input end (INO) of the mandrel coil (200) and unwinding the mandrel belt (B0) from an output end (OUT0) of the mandrel coil (200) so as to move the surface of the first complete turn (BO.sub.A) of the mandrel coil (200), —forming a laminated sleeve (SLEEVE1) by feeding a first strip (S1) on the moving surface of the first complete turn (BO.sub.A) of the mandrel coil (200), and—forming an endless abrasive article (100) by cutting the laminated sleeve (SLEEVE1).

The present disclosure relates to surface modified silica, where the surface of the silica is modified by a quaternary ammonium-based polymer. Modification of the silica surface in this manner allows for production of silica particles with a high zeta potential and minimal change in particle size.

A method of preparing a polishing composition includes forming a dispersion solution containing ceria particles, and irradiating ultraviolet (UV) light onto the dispersion solution.

The disclosure relates to sintered ceramic grains comprising 3-55 wt. % alumina, 40-95 wt. % zirconia and 1-30 wt. % of one or more other inorganic components. The invention further relates to a method for preparing ceramic grains according to the invention, comprising: making a slurry comprising alumina, zirconia; making droplets of the slurry; introducing the droplets in a liquid gelling-reaction medium wherein the droplets are gellified; drying the gellified deformed droplets.

Provided is a polishing composition that can achieve haze reduction and wettability enhancement of a polished surface of a silicon wafer. This polishing composition contains silica particles, a cellulose derivative, a basic compound, and water. Here, the silica particles have an average primary particle diameter of 30 nm or less and an average secondary particle diameter of 60 nm or less. The cellulose derivative has a weight average molecular weight of more than 120×10.sup.4.

In order to use less cerium oxide and achieve higher durability and polishing speeds, these abrasive particles used in an abrasive have: a shell layer (3) which is the outermost shell layer of the abrasive particles and is formed with cerium oxide as the main component; and a middle layer (2) which contains cerium oxide and an oxide of at least one element selected from Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th, and the alkali earth metals, and which is formed closer to the center of the abrasive particles than the shell layer (3).