Patent classifications
C09K3/1454
Polishing compositions and methods of use thereof
A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.
Polishing Compositions and Methods of Using Same
This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.
Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.
POLISHING SLURRY COMPOSITION
A polishing slurry composition is provided. The polishing slurry composition includes abrasive particles, an oxidizer, an iron-containing catalyst, and a stabilizer, and a retention rate of the oxidizer according to Equation 1 is 70% or greater.
Retention rate (%) of oxidizer=(concentration (%) of oxidizer after 7 days at room temperature×100)/(initial concentration (%) of oxidizer in polishing slurry composition) [Equation 1]
Polishing liquid, polishing liquid set, and polishing method
A polishing liquid containing: abrasive grains; a hydroxy acid; a polymer compound having at least one selected from the group consisting of a hydroxyl group and an amide group; and a liquid medium, in which a zeta potential of the abrasive grains is positive, and a weight average molecular weight of the polymer compound is 3000 or more.
Slurry composition and method of manufacturing integrated circuit device by using the same
A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.
Etching composition, method for etching insulating film of semiconductor devices using the same and method for preparing semiconductor devices
An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: ##STR00001## wherein: L.sup.1 to L.sup.3 are independently substituted or unsubstituted hydrocarbylene, R.sup.1 to R.sup.4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and X.sup.n− is an n-valent anion, where n is an integer of 1 to 3.
MAGNETIC POLISHING SLURRY AND METHOD FOR POLISHING A WORKPIECE
A magnetic polishing slurry for polishing a workpiece includes magnetic particles coated with a modifying material, a liquid carrier, and abrasives. The modifying material has a hardness lower than that of the workpiece.
Calcium carbonate slurry
A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.
NOBLE METAL SURFACE CLEANING PASTE, AND PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
A noble metal surface cleaning paste, a preparation method therefor and an application thereof are provided. Raw materials of preparing the cleaning paste include an abrasive, a thickening agent, and water. A weight ratio of the abrasive : the thickening agent : the water is 100: (0.1-5): 100. According to the cleaning paste, by a purely physical method, i.e., friction action between various tiny particles and a noble metal surface, an effect of removing an oxide layer and dirt on the surface is achieved. The cleaning paste does not contain any corrosive chemical component and thus not cause any damage to skin and the surface. The cleaning paste is mainly for cleaning oxidized noble metal surfaces, so that noble metal products that have been oxidized and darkened become glossy again. The cleaning paste is stable in property and can be stored for a long time without affecting its use effect.