A wavelength converter material and a method of A method of preparing a wavelength converter material may include providing an optionally oxide coated phosphor material, mixing the optionally oxide coated phosphor material with an optionally oxide coated paramagnetic nanoparticle, coating the optionally oxide coated phosphor material and the optionally oxide coated paramagnetic nanoparticle with an oxide coating, thereby preparing a coated phosphor-nanoparticle particle, and separating the coated phosphor-nanoparticle particle, thereby preparing a wavelength converter material. The separating of the coated phosphor-nanoparticle particle may be manipulated by applying a magnetic field.

Furthermore, a wavelength converter material, as well as a light emitting diode are described herein.

Fluorescent material composite particles include translucent inorganic particles having a volume average particle diameter in a range of 30 nm or more and 500 nm or less, fluorescent nanoparticles having an average particle diameter in a range of 5 nm or more and 25 nm or less, and a first resin. At least a part of each of the translucent inorganic particles are embedded in the first resin. The translucent inorganic particles are unevenly distributed to a surface of the fluorescent material composite particles. The fluorescent material composite particles have a volume average particle diameter in a range of 0.5 μm or more and 50 μm or less.

A wavelength conversion member including a wavelength conversion layer containing a fluoride phosphor, quantum dots, a surfactant, and a resin. The fluoride phosphor contains fluoride particles having a specific composition and having particle size values within specific ranges. The quantum dots include at least one selected from a first crystalline nanoparticle and a second crystalline nanoparticle. The first crystalline nanoparticle has a specific composition. When irradiated with light having a wavelength of 450 nm, the first crystalline nanoparticle emits light having an emission peak at a wavelength in a range from 510 nm to 535 nm, and a full width at half maximum of the emission peak of the first crystalline nanoparticle is in a range from 10 nm to 30 nm. The second crystalline nanoparticle includes a chalcopyrite-type crystalline structure, and a full width at half maximum of the emission peak of the second crystalline nanoparticle is 45 nm or less.

A ligand includes a molecular skeleton, a first coordinating group connected to the molecular skeleton, at least one initial group connected to the molecular skeleton, and a protecting group connected to an end of each initial group away from the molecular skeleton. Each initial group is capable of forming a second coordinating group after deprotection.

A light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a plurality of quantum dots and metal carboxylate having at least one hydrocarbon group of at least one carbon atoms, and the plurality of quantum dots includes a first organic ligand, and does not include cadmium and lead, and a method of manufacturing the same.

A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.

There is disclosed a compound having Formula I ##STR00001## In Formula, I: Ar.sup.1 is selected from the group consisting of dibenzofuran, dibenzothiophene, or deuterated analogs thereof; Ar.sup.2 and Ar.sup.3 are the same or different and are hydrocarbon aryl, substituted derivatives thereof, or deuterated analogs thereof, with the proviso that Ar.sup.2 and Ar.sup.3 are not the same as Ar.sup.1; a is 0; and Ar.sup.1, Ar.sup.2, and Ar.sup.3 have no additional amino substituents.

The present disclosure relates to organic electroluminescent compounds, and a host material, an electron buffer material, an electron transport material and an organic electroluminescent device comprising the same. By using the organic electroluminescent compounds of the present disclosure, the organic electroluminescent device secures fast electron current properties by intermolecular stacking and interaction, and thus, it is possible to provide the organic electroluminescent device having low driving voltage and/or excellent luminous efficiency and/or efficient lifespan properties.

A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.

The objective of the invention is to provide a wavelength conversion film demonstrating a high optical density, a wavelength conversion film forming composition used suitably for forming the wavelength conversion film, and a production method for a cluster-containing quantum dot that may be applied suitably to the wavelength conversion film and the wavelength conversion film forming composition. In this invention, for a wavelength conversion film containing a quantum dot converting blue light into red light or green light, the light beam transmittance of the wavelength conversion film at 450 nm wavelength is set to 40% or lower, the light beam transmittance of the wavelength conversion film at 650 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is red, and the light beam transmittance of the wavelength conversion film at 550 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is green.