Provided are a method of manufacturing a multi-component semiconductor nanocrystal, a multi-component semiconductor nanocrystal manufactured by the method, and a quantum dot including the same. The method includes irradiating microwaves to a semiconductor nanocrystal synthesis composition, and the semiconductor nanocrystal synthesis composition includes a precursor including a Group I element, a precursor including a Group II element, a precursor including a Group III element, a precursor including a Group V element, a precursor including a Group VI element, or any combination thereof.

A light emitting assembly comprising at least one of each of a solid state device and a thermal radiation source, couplable with a power supply constructed and arranged to power the solid state device and the thermal radiation source, to emit from the solid state device a first, relatively shorter wavelength radiation, and to emit from the thermal radiation source non-visible infrared radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and the infrared radiation, and which in exposure to said first, relatively shorter wavelength radiation, and infrared radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue light output from a light-emitting diode is down-converted to white light by packaging the diode and the thermal radiation device with fluorescent or phosphorescent organic and/or inorganic fluorescers and phosphors in an enclosure.

According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.

Provided is a method for producing a β-sialon fluorescent material, comprising preparing a composition containing a silicon nitride that contains aluminium, oxygen, and europium; heat-treating the composition at a temperature in a range of 1300° C. or more and 1600° C. or less to obtain a heat-treated product; subjecting the heat-treated product to a temperature-decrease of from the heat treatment temperature to 1000° C. as a first temperature-decrease step; and subjecting the heat-treated product to a temperature-decrease of from 1000° C. to 400° C. as a second temperature-decrease step. The first temperature-decrease step has a temperature-decrease rate in a range of 1.5° C./min or more and 200° C./min or less, and the second temperature-decrease step has a temperature-decrease rate in a range of 1° C./min or more and 200° C./min or less.

A quantum dot composition, including a first quantum dot and a second quantum dot, wherein a valence band maximum energy level of the first quantum dot is different from a valence band maximum energy level of the second quantum dot, as determined by ambient photoelectron spectroscopy, and an energy band gap of the first quantum dot is identical to an energy band gap of the second quantum dot, as determined by ultraviolet-visible spectroscopy.

A composition contains quantum dots (A) and a resin (B), wherein the resin (B) contains a polymer (B1) having a sulfide group, a carboxyl group, and an unsaturated double bond.

A processing apparatus includes a chuck table having a holding surface for holding a workpiece; a horizontal moving mechanism that moves the chuck table in a horizontal direction and is supplied with a first oil; and a vertical moving mechanism that moves a processing unit in a vertical direction and is supplied with a second oil. Before mounting the workpiece on the holding surface, the holding surface is imaged by a camera while being irradiated with light, and it is examined whether or not the picked-up image is emitting light. If there is a light-emitting part in the picked-up image, it is determined that oil is adhered to the light-emitting part.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Provided is an organic electroluminescent display device that further suppresses reflection of external light when viewed in an oblique direction; a phase difference film; and a circularly polarizing plate. This display device has an organic electroluminescent display panel, and a circularly polarizing plate arranged on the display panel, in which the circularly polarizing plate has a polarizer and a phase difference film, the phase difference film has, from a side of the polarizer, a negative A-plate, and a positive A-plate, the in-plane retardation of the negative A-plate at a wavelength of 550 nm is more than 50 nm and less than 90 nm, and the in-plane retardation of the positive A-plate at a wavelength of 550 nm is 100 to 200 nm, and the angle formed by the in-plane slow axis of the negative A-plate and the in-plane slow axis of the positive A-plate is 45°±10°.

A display device can include a substrate including a display area, a subpixel positioned on the substrate and positioned in the display area, and a black bank positioned on the substrate. The black bank can include a first opening corresponding to an emission area of the subpixel, and quantum dots that absorb light having a wavelength in a visible light region. As a result, the display device can reduce external light reflectance.