The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. ##STR00001##
(R is as defined in the specification.)

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

The present invention relates to a method for synthesizing a semiconducting nanosized material.

A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

The present invention provides: a liquid composition which can be suitably used for production of an optical film having a favorable fluorescence efficiency and includes quantum dots (A), a quantum dot-containing film obtained by drying and/or curing the liquid composition, an optical film for a light-emitting display element made of the quantum dot-containing film, a light-emitting display element panel including the optical film, and a light-emitting display equipped with the light-emitting display element panel. An ionic liquid (B), and a solvent (S) are incorporated into a liquid composition including quantum dots (A), in which the solvent (S) includes a solvent (S1), the solvent (S1) being a compound having a cyclic skeleton and including a heteroatom other than a hydrogen atom and a carbon atom.

ROSH compliant mixed quantum dot films are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

Provided is a semiconductor nanoparticle-containing composition capable of forming a wavelength conversion layer that efficiently converts the wavelength of excitation light and exhibits sufficient luminescence intensity. An aspect of the semiconductor nanoparticle-containing composition of the present invention contains semiconductor nanoparticles (A) and a coloring matter (B) and further contains a polymerizable compound (C), in which the semiconductor nanoparticles (A) have a maximum emission wavelength in the range of 500 to 670 nm over a wavelength range of 300 to 780 nm, and the coloring matter (B) contains at least one selected from coloring matters (B1) to (B5) having specific structures.

A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni.sup.2+, a perovskite type phosphor doped with Ni.sup.2+ and Cr.sup.3+, and a garnet type phosphor doped with Ni.sup.2+ and Cr.sup.3+.

Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.

A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.