An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na).sub.2(Si,Ti)F.sub.6:Mn.sup.4+ and a second red phosphor of the formula(M).sub.2-xEu.sub.xSi.sub.2Al.sub.2N.sub.6 where M=Sr, Ca, Ba, and/or Mg and 0.001x0.2, and wherein the optoelectronic device is configured to emit white total radiation.

A method of preparing a mechanoluminescent material includes the steps of: a) providing a mixture including precursors of a base material, a fluxing agent, and at least one lanthanide ion; b) heat-treating the mixture to obtain the mechanoluminescent material; and c) optionally grinding the mechanoluminescent material into powder form; wherein the fluxing agent facilitates incorporation of the at least one lanthanide ion into the base material. A composite material includes a first mechanoluminescent material, wherein the first mechanoluminescent material includes at least 2-3 mol % of a lanthanide ion.

A method for preparing a light sensitive particle that uses at least one metal precursor material and at least one dopant precursor material mixed in solution absent a surfactant. Upon an optional adjustment of pH to about 3 to about 6, a light-sensitive particle comprising a metal-dopant material may be formed and separated from the solution. The light-sensitive particle may comprise a Q-dot particle. Also described are the particles themselves.

A light source for emitting emitted light having an SPD comprising: (a) a plurality of light emitters including at least one violet solid-state emitter; (b) at least one phosphor; wherein said light emitters and said at least one phosphor being configured such that: at least 25% of the power within the SPD is in the range 390-420 nm, and the emitted light has a chromaticity which is within a Duv distance of less than 5 points from the Planckian locus.

A light source for emitting emitted light having an SPD comprising: (a) a plurality of light emitters including at least one violet solid-state emitter; (b) at least one phosphor; wherein said light emitters and said at least one phosphor being configured such that: at least 25% of the power within the SPD is in the range 390-420 nm, and the emitted light has a chromaticity which is within a Duv distance of less than 5 points from the Planckian locus.

There is provided a fluoride phosphor composite including: fluoride phosphor core particles that may be expressed by the empirical formula A.sub.xMF.sub.y:Mn.sup.4+, wherein A may be at least one selected from the group consisting of Li, Na, K, Rb, and Cs, M may be at least one selected from the group consisting of Si, Ti, Zr, Hf, Ge, and Sn, the composition ratio (x) of A may satisfy 2x3, the composition ratio (y) of F may satisfy 4y7, each fluoride phosphor composite particle may be coated with a Mn-free fluoride coating. The Mn-free fluoride coating may have a thickness less than or equal to 35% of the size of each fluoride phosphor composite particle.

There is provided a fluoride phosphor composite including: fluoride phosphor core particles that may be expressed by the empirical formula A.sub.xMF.sub.y:Mn.sup.4+, wherein A may be at least one selected from the group consisting of Li, Na, K, Rb, and Cs, M may be at least one selected from the group consisting of Si, Ti, Zr, Hf, Ge, and Sn, the composition ratio (x) of A may satisfy 2x3, the composition ratio (y) of F may satisfy 4y7, each fluoride phosphor composite particle may be coated with a Mn-free fluoride coating. The Mn-free fluoride coating may have a thickness less than or equal to 35% of the size of each fluoride phosphor composite particle.

A exemplary light emitting device includes an excitation source operable to generate excitation light with a dominant wavelength in a range 450 nm to 470 nm; a red photoluminescence material which generates light with a peak emission wavelength in a range 600 nm to 620 nm with a full width at half maximum emission intensity greater than 70 nm and less than 80 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength in a range 530 nm to 550 nm; and a narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 625 nm to 635 nm with a full width at half maximum emission intensity greater than about 5 nm and less than about 25 nm.

A process for synthesizing a Mn.sup.4+ doped phosphor of formula I by electrolysis is presented. The process includes electrolyzing a reaction solution comprising a source of manganese, a source of M and a source of A. One aspect relates to a phosphor composition produced by the process. A lighting apparatus including the phosphor composition is also provided. A.sub.x[MF.sub.y]:Mn.sup.4+ (I) where, A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7.

A process for synthesizing a Mn.sup.4+ doped phosphor of formula I by electrolysis is presented. The process includes electrolyzing a reaction solution comprising a source of manganese, a source of M and a source of A. One aspect relates to a phosphor composition produced by the process. A lighting apparatus including the phosphor composition is also provided. A.sub.x[MF.sub.y]:Mn.sup.4+ (I) where, A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7.