A scintillator structure includes a plurality of cells and a reflector covering the plurality of cells. Here, each of the plurality of cells includes a resin and a phosphor, and the phosphor contains gadolinium oxysulfide. A breaking strength of an interface between each of the plurality of cells and the reflector is 900 gf or more.

A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

Provided is an organic electroluminescent display device that further suppresses reflection of external light when viewed in an oblique direction; a phase difference film; and a circularly polarizing plate. This display device has an organic electroluminescent display panel, and a circularly polarizing plate arranged on the display panel, in which the circularly polarizing plate has a polarizer and a phase difference film, the phase difference film has, from a side of the polarizer, a negative A-plate, and a positive A-plate, the in-plane retardation of the negative A-plate at a wavelength of 550 nm is more than 50 nm and less than 90 nm, and the in-plane retardation of the positive A-plate at a wavelength of 550 nm is 100 to 200 nm, and the angle formed by the in-plane slow axis of the negative A-plate and the in-plane slow axis of the positive A-plate is 45°±10°.

Provided is an organic electroluminescent display device that further suppresses reflection of external light when viewed in an oblique direction; a phase difference film; and a circularly polarizing plate. This display device has an organic electroluminescent display panel, and a circularly polarizing plate arranged on the display panel, in which the circularly polarizing plate has a polarizer and a phase difference film, the phase difference film has, from a side of the polarizer, a negative A-plate, and a positive A-plate, the in-plane retardation of the negative A-plate at a wavelength of 550 nm is more than 50 nm and less than 90 nm, and the in-plane retardation of the positive A-plate at a wavelength of 550 nm is 100 to 200 nm, and the angle formed by the in-plane slow axis of the negative A-plate and the in-plane slow axis of the positive A-plate is 45°±10°.

A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a Group 5A element. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including an antimony cation.

A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a Group 5A element. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including an antimony cation.

A light emitting element according to an embodiment includes a first electrode, a second electrode overlapping the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron transport region disposed between the emission layer and the second electrode, wherein the electron transport region includes a thermal acid generator (TAG). A method of manufacturing a light emitting element is also provided.

A light emitting element according to an embodiment includes a first electrode, a second electrode overlapping the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron transport region disposed between the emission layer and the second electrode, wherein the electron transport region includes a thermal acid generator (TAG). A method of manufacturing a light emitting element is also provided.

Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.

The present invention relates to a method for synthesizing a semiconducting nanosized material.