A boron nitride fluorescent material, having at least one light emission peak wavelength in a range of 480 nm or more and less than 650 nm as excited with light having a light emission peak wavelength in a range of 250 nm or more and 460 nm or less, and comprising: at least one element A selected from the group consisting of alkaline earth metal elements; nitrogen and boron; and optionally at least one element M1 selected from the group consisting of Tb, Sm, Pr, Ce, Mn, and Yb.

The invention discloses use of a uranium-containing compound as a scintillator. The uranium-containing compound is a uranium-containing organic-inorganic hybrid compound or a uranium-containing inorganic compound. The uranium-containing organic-inorganic hybrid compound is a uranium-containing organic carboxylate or a uranium-containing organophosphate. The uranium-containing inorganic compound is a uranium-containing non-metallate, a uranium-containing metal salt, or a uranium-containing halide. The invention discloses the uranium-containing organic-inorganic compound or the uranium-containing inorganic compound having intrinsic scintillating ability, and provides a new concept and method for the development of (organic-inorganic, inorganic) scintillators of various chemical compositions and configurations with the uranium element.

The invention discloses use of a uranium-containing compound as a scintillator. The uranium-containing compound is a uranium-containing organic-inorganic hybrid compound or a uranium-containing inorganic compound. The uranium-containing organic-inorganic hybrid compound is a uranium-containing organic carboxylate or a uranium-containing organophosphate. The uranium-containing inorganic compound is a uranium-containing non-metallate, a uranium-containing metal salt, or a uranium-containing halide. The invention discloses the uranium-containing organic-inorganic compound or the uranium-containing inorganic compound having intrinsic scintillating ability, and provides a new concept and method for the development of (organic-inorganic, inorganic) scintillators of various chemical compositions and configurations with the uranium element.

A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc.sub.1-x-yA.sub.yRE:Cr.sub.x, wherein MO=P.sub.3O.sub.9, BP.sub.3O.sub.12, SiP.sub.3O.sub.12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

A family of optionally substituted oxonitridoberyllosilicate photoluminescent compositions (i.e., phosphors) is characterized by the formula AE.sub.1?x?y?uA.sub.y+uBe.sub.1?y?z?vB.sub.y+z+vSi.sub.1?z Al.sub.zO.sub.1?vN.sub.2+v: Eu.sub.x,Ce.sub.u, where AE=Ba, Sr, Ca, Mg; A=Li, Na, K, Rb; 0?x?0.1; 0? u?0.1; 0<(x+u); 0?y?1; 0?z?1; (y+z+v)?1; and (x+y+u)?1. These phosphors may be used in phosphor converted LEDs which may be advantageously employed in illumination and display applications, for example.

A family of optionally substituted oxonitridoberyllosilicate photoluminescent compositions (i.e., phosphors) is characterized by the formula AE.sub.1?x?y?uA.sub.y+uBe.sub.1?y?z?vB.sub.y+z+vSi.sub.1?z Al.sub.zO.sub.1?vN.sub.2+v: Eu.sub.x,Ce.sub.u, where AE=Ba, Sr, Ca, Mg; A=Li, Na, K, Rb; 0?x?0.1; 0? u?0.1; 0<(x+u); 0?y?1; 0?z?1; (y+z+v)?1; and (x+y+u)?1. These phosphors may be used in phosphor converted LEDs which may be advantageously employed in illumination and display applications, for example.

A luminescent composition of matter is characterized by the formula REM.sub.2+xE.sub.y, where RE may be one or more Rare Earth elements (for example, Eu or Gd), M may be one or more elements selected from the group Al, Ga, B, In, Sc, Lu, and Y; E is one or more elements selected from the group S, Se, O, and Te; x is greater than zero; and y has the value that achieves charge balance in the formula assuming that E has a charge of 2.

A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.

A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.

A phosphor includes a crystal phase having a composition represented by Re.sup.xMA.sup.aMB.sup.bMC.sup.cD.sup.dX.sup.e, in which MA includes at least one of Ca, Sr, Ba, Na, K, Y, Gd, or La, MB includes at least one of Li, Mg, or Zn, MC includes at least one of Al, Si, Ga, In, or Sc, D is N (nitrogen) and/or O (oxygen), X includes at least one of F, Cl, Br, or I, Re includes at least one of Eu, Ce, Pr, Tb, or Dy, and a, b, c, d, e, and x satisfy the specific expressions, respectively. In the phosphor, when a content of B (boron) is designated as b (mass ppm), a value of Log.sub.10(b) is 3.5 or less.