Provided is an organic light emitting diode display device. The organic light emitting diode display device includes a flexible substrate, including a display region, a first barrier region and a second barrier region, wherein the first barrier region is located between the display region and the second barrier region, and a barrier is disposed on the flexible substrate of the second barrier region; wherein a groove is formed in the flexible substrate of the first barrier region, and an organic light emitting diode unit is disposed on the flexible substrate of the display region.

According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.

According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.

Provided is a wavelength conversion member that is less decreased in luminescence intensity with time by irradiation with light of an LED or LD and a light emitting device using the wavelength conversion member. A wavelength conversion member is formed of an inorganic phosphor dispersed in a glass matrix, wherein the glass matrix contains, in % by mole, 30 to 85% SiO.sub.2, 0 to 20% B.sub.2O.sub.3, 0 to 25% Al.sub.2O.sub.3, 0 to 3% Li.sub.2O, 0 to 3% Na.sub.2O, 0 to 3% K.sub.2O, 0 to 3% Li.sub.2O+Na.sub.2O+K.sub.2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 4% ZnO, and the inorganic phosphor is at least one selected from the group consisting of an oxide phosphor, a nitride phosphor, an oxynitride phosphor, a chloride phosphor, an oxychloride phosphor, a halide phosphor, an aluminate phosphor, and a halophosphate phosphor.

Provided is a wavelength conversion member that is less decreased in luminescence intensity with time by irradiation with light of an LED or LD and a light emitting device using the wavelength conversion member. A wavelength conversion member is formed of an inorganic phosphor dispersed in a glass matrix, wherein the glass matrix contains, in % by mole, 30 to 85% SiO.sub.2, 0 to 20% B.sub.2O.sub.3, 0 to 25% Al.sub.2O.sub.3, 0 to 3% Li.sub.2O, 0 to 3% Na.sub.2O, 0 to 3% K.sub.2O, 0 to 3% Li.sub.2O+Na.sub.2O+K.sub.2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 4% ZnO, and the inorganic phosphor is at least one selected from the group consisting of an oxide phosphor, a nitride phosphor, an oxynitride phosphor, a chloride phosphor, an oxychloride phosphor, a halide phosphor, an aluminate phosphor, and a halophosphate phosphor.

Provided is a luminescent material having excellent durability. The luminescent material contains second semiconductor nanoparticles that contain first semiconductor nanoparticles and a deposit arranged on surfaces of the first semiconductor nanoparticles, and that emit light when irradiated with light; and a metal compound in which the second semiconductor nanoparticles are embedded. The first semiconductor nanoparticles contain M.sup.1, M.sup.2, and Z. M.sup.1 is at least one selected from the group consisting of Ag, Cu, Au and alkali metals, and contains at least Ag. M.sup.2 is at least one selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga. Z contains at least one selected from the group consisting of S, Se, and Te. The deposit is substantially composed of at least one selected from the group consisting of Al, Ga, In, Tl and alkali metals, and at least one selected from the group consisting of S, O, Se, and Te. The metal compound contains at least one of Zn and Ga, and at least one of S and O.

Provided is a luminescent material having excellent durability. The luminescent material contains second semiconductor nanoparticles that contain first semiconductor nanoparticles and a deposit arranged on surfaces of the first semiconductor nanoparticles, and that emit light when irradiated with light; and a metal compound in which the second semiconductor nanoparticles are embedded. The first semiconductor nanoparticles contain M.sup.1, M.sup.2, and Z. M.sup.1 is at least one selected from the group consisting of Ag, Cu, Au and alkali metals, and contains at least Ag. M.sup.2 is at least one selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga. Z contains at least one selected from the group consisting of S, Se, and Te. The deposit is substantially composed of at least one selected from the group consisting of Al, Ga, In, Tl and alkali metals, and at least one selected from the group consisting of S, O, Se, and Te. The metal compound contains at least one of Zn and Ga, and at least one of S and O.

Provided are a quantum dot-ligand composite which includes quantum dots including a semiconductor nanocrystalline core that includes Group III and V elements and a semiconductor nanocrystalline shell that is disposed on the semiconductor nanocrystalline core and includes Group II and VI elements; and organic ligands coordinated to the quantum dots. Additionally, a quantum dot-ligand composite with high luminescence properties and stability according to the electrostatic effective binding ratio between the quantum dots and the organic ligands bound to the surface of the quantum dots, and a photosensitive resin composition, optical film, electroluminescent diode, and electronic device including the same can be provided.

A phosphor plate includes a plate-like composite including an inorganic base material, which is a sintered material of two or more types of metal oxide including SiO.sub.2, and a phosphor contained in the inorganic base material, in which the phosphor includes an α-type sialon phosphor, and in a case in which intensity of transmitted light at a wavelength of 455 nm and intensity of reflected light at a wavelength of 455 nm of the phosphor plate are denoted by T1 and R1, respectively, T1 and R1 satisfy 1.5×10.sup.−2≤T1/R1≤5.0×10.sup.−2.

Provided is a light-emitting device having a high luminous flux.

The light-emitting device comprises a light-emitting element 11 that has a dominant wavelength in a range of 380 nm or more and 485 nm or less, and a fluorescent material layer 31 that includes a fluorescent material emitting light by being excited by light emitted from the light-emitting element 11, and a neodymium compound, wherein the light-emitting device emits light having a dominant wavelength in a range of 584 nm or more and 780 nm or less.