A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

Provided is an aluminate fluorescent material having a high emission intensity and having a composition containing a first element that contains one or more of Ba and Sr, and a second element that contains Mg and Mn. In the composition, when a molar ratio of Al is 10, a total molar ratio of the first element is a parameter a, a total molar ratio of the second element is a parameter b, a molar ratio of Sr is a product of a parameter m and the parameter a, a molar ratio of Mn is a product of a parameter n and the parameter b. The parameters a and b satisfy 0.5<b<a≦0.5b+0.5<1.0, the parameter m satisfies 0≦m≦1.0, and the parameter n satisfies 0.4≦n≦0.7.

A method of producing a light transmissive element includes providing a holding member including an upper surface and a plurality of holes, each of the plurality of holes having at least one inner lateral surface that is a substantially smooth surface and an opening in the upper surface of the holding member; filling the plurality of holes with a wavelength conversion member containing fluorescent particles and a light transmissive member such that the wavelength conversion member is in contact with the inner lateral surface of each of the plurality of holes; molding the wavelength conversion member; and taking out the wavelength conversion member from the holding member after the molding of the wavelength conversion member.

A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.

A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.

A display device according to an embodiment of the present disclosure may include a lower substrate disposed with a line electrode at an upper portion thereof, a plurality of semiconductor light emitting devices electrically connected to the line electrode to generate light, a wavelength converter disposed on the semiconductor light emitting device to convert a wavelength of light generated from the semiconductor light emitting device, and a conductive adhesive layer comprising conductors configured to electrically connect the lower substrate to the semiconductor light emitting device and a body configured to surround the conductors, wherein the semiconductor light emitting device has a composition formula of In.sub.xAl.sub.yGa.sub.1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

A display device according to an embodiment of the present disclosure may include a lower substrate disposed with a line electrode at an upper portion thereof, a plurality of semiconductor light emitting devices electrically connected to the line electrode to generate light, a wavelength converter disposed on the semiconductor light emitting device to convert a wavelength of light generated from the semiconductor light emitting device, and a conductive adhesive layer comprising conductors configured to electrically connect the lower substrate to the semiconductor light emitting device and a body configured to surround the conductors, wherein the semiconductor light emitting device has a composition formula of In.sub.xAl.sub.yGa.sub.1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1).