A material represented by the following formula (I)

(M).sub.8M.sub.6M.sub.6O.sub.24(X,S).sub.2:Mformula (I).

Also disclosed is an ultraviolet radiation sensing material, an X-radiation sensing material, a device and a method for determining the intensity of ultraviolet radiation.

Provided is a phosphor represented by the general formula: A.sub.2MF.sub.6:Mn. The elements A each represents an alkali metal element, the element M represents one or more tetravalent metallic elements selected from Si, Ge, Sn, Ti, Zr and Hf. The phosphor has a minimal light absorption rate in a wavelength range of 300 nm or more and 350 nm or less of 67% or less, and a maximum light absorption rate in a wavelength range of 400 nm or more and 500 nm or less of 65% or more. The phosphor has a Mn content of 0.3% by mass or more and 1.5% by mass or less.

The invention relates to a material represented by the following formula (I)
(M).sub.8M.sub.6M.sub.6O.sub.24(X,S).sub.2:Mformula (I).
Further, the invention relates to an ultraviolet radiation sensing material, to an X-radiation sensing material, to different uses, to a device and to a method for determining the intensity of ultraviolet radiation.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100? C. to the emission intensity at 25? C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Provided is a stabilized zirconia sintered body which comprises a fluorescent agent containing zirconium and titanium, and shows fluorescence when irradiated with light including light of a wavelength of 250 nm to 380 nm.

Disclosed are a preparation method for manganese-doped red phosphor, a device and a backlight module including the product. The method includes: 1) mixing A.sub.2BF.sub.6 polycrystalline particles with mill balls; 2) mixing A.sub.2BF.sub.6 powder obtained after ball-milling with a hydrofluoric acid for secondary crystallization; 3) filtering out solid particles in A.sub.2BF.sub.6 and hydrofluoric acid solution after the secondary crystallization; 4) performing ion exchange between A.sub.2BF.sub.6 particles and A.sub.2BF.sub.6; and 5) filtering out solid particles to obtain a filter cake, and performing drying treatment to obtain manganese-doped red phosphor.

Provided is an oxide fluorescent material having a light emission peak in a wavelength range from red light to near-infrared light.

The oxide fluorescent material has a composition including: a first element M.sup.1 being at least one element selected from the group consisting of Li, Na, K, Rb, and Cs; a second element M.sup.2 being at least one element selected from the group consisting of Ca, Sr, Mg, Ba, and Zn; Ge; O (oxygen); and Cr, the composition optionally including: a third element M.sup.3 being at least one element selected from the group consisting of Si, Ti, Zr, Sn, Hf, and Pb; and a fourth element M.sup.4 being at least one element selected from the group consisting of Eu, Ce, Tb, Pr, Nd, Sm, Yb, Ho, Er, Tm, Ni, and Mn. When the molar ratio of Ge, or the total molar ratio of the third element M.sup.3 and Ge in the case of comprising the third element M.sup.3, in 1 mol of the composition of the oxide fluorescent material is 6, the molar ratio of the first element M.sup.1 is 1.5 or more and 2.5 or less, the molar ratio of the second element M.sup.2 is 0.7 or more and 1.3 or less, the molar ratio of the third element M.sup.3 is 0 or more and 0.4 or less, the molar ratio of O (oxygen) is 12.9 or more and 15.1 or less, and the molar ratio of Cr is 0.2 or less. The oxide fluorescent material has a light emission peak wavelength of 700 nm or more and 1,050 nm or less in a light emission spectrum of the oxide fluorescent material.

There are provided a nitride-based MXene light-emitting quantum dot and a method of manufacturing the same. The nitride-based MXene light-emitting quantum dot includes a nitride-based MXene quantum dot having a diameter of 10 nm or less and absorbs ultraviolet light to emit light, and the nitride-based MXene light-emitting quantum dot has an effect of efficiently generating light emission by increasing bandgap energy of MXene by inducing a quantum confinement effect by reducing the size of the quantum dot.

There are provided a nitride-based MXene light-emitting quantum dot and a method of manufacturing the same. The nitride-based MXene light-emitting quantum dot includes a nitride-based MXene quantum dot having a diameter of 10 nm or less and absorbs ultraviolet light to emit light, and the nitride-based MXene light-emitting quantum dot has an effect of efficiently generating light emission by increasing bandgap energy of MXene by inducing a quantum confinement effect by reducing the size of the quantum dot.

The present invention provides a functional material, its preparation method, and an organic light emitting diode display panel, which belongs to the display technical field and can solve the pollution problem in current organic light emitting diode display panels. The functional material comprises an inorganic mixed powder with a modified layer, the inorganic mixed powder comprising boron oxide, sodium oxide, lithium oxide, zirconium oxide, aluminum oxide, zinc oxide, titanium oxide, silicon dioxide, calcium oxide, silver complexes, silver phosphate, silver nitrate, tourmaline, silver thiosulfate, carbon nanotubes, aluminum sulfate, manganese, manganese oxide, iron, iron oxide, cobalt, cobalt oxide, nickel, nickel oxide, chromium, chromium oxide, copper, copper oxide, magnesium oxide, boron carbide, silicon carbide, titanium carbide, zirconium carbide, tantalum carbide, molybdenum carbide, boron nitride, chromium nitride, titanium nitride, zirconium nitride, aluminum nitride, chromium boride, Cr.sub.3B.sub.4, titanium boride, zirconium boride, tungsten disilicide, titanium disilicide and the like; the modified layer being generated by a reaction of a dianhydride and a diamine.