Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.

A core-shell type quantum dot comprising, a semiconductor nanocrystal core including at least In and P, and having group III-V elements as constituent elements and a single or a plurality of semiconductor nanocrystal shells having group II-VI elements as constituent elements covering the semiconductor nanocrystal core, wherein a buffer layer comprising semiconductor nanocrystals having group II-V elements as constituent elements is included between the semiconductor nanocrystal core and the semiconductor nanocrystal shell. As a result, quantum dots using group II-V semiconductor nanocrystals as a core and having improved fluorescence emission efficiency are provided.

A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

The objective of the invention is to provide a wavelength conversion film demonstrating a high optical density, a wavelength conversion film forming composition used suitably for forming the wavelength conversion film, and a production method for a cluster-containing quantum dot that may be applied suitably to the wavelength conversion film and the wavelength conversion film forming composition. In this invention, for a wavelength conversion film containing a quantum dot converting blue light into red light or green light, the light beam transmittance of the wavelength conversion film at 450 nm wavelength is set to 40% or lower, the light beam transmittance of the wavelength conversion film at 650 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is red, and the light beam transmittance of the wavelength conversion film at 550 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is green.

The objective of the invention is to provide a wavelength conversion film demonstrating a high optical density, a wavelength conversion film forming composition used suitably for forming the wavelength conversion film, and a production method for a cluster-containing quantum dot that may be applied suitably to the wavelength conversion film and the wavelength conversion film forming composition. In this invention, for a wavelength conversion film containing a quantum dot converting blue light into red light or green light, the light beam transmittance of the wavelength conversion film at 450 nm wavelength is set to 40% or lower, the light beam transmittance of the wavelength conversion film at 650 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is red, and the light beam transmittance of the wavelength conversion film at 550 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is green.

A bathless plating for a conductive material with composite particles or with high surface coverage. The setup for the bathless electro-plating includes a cathode, a composite mixture, a membrane, and an anode. The cathode is a conductive material. The composite mixture comprises a metal salt, an acid, and a composite material. The composite mixture is applied to the cathode. A hydrophilic membrane is applied to the composite mixture. An anode, with oxidizing properties, is applied to the membrane. A current is applied to the bathless setup. Upon removing the current and composite mixture from the cathode, a metal-based composite coating remains on the cathode.

A bathless plating for a conductive material with composite particles or with high surface coverage. The setup for the bathless electro-plating includes a cathode, a composite mixture, a membrane, and an anode. The cathode is a conductive material. The composite mixture comprises a metal salt, an acid, and a composite material. The composite mixture is applied to the cathode. A hydrophilic membrane is applied to the composite mixture. An anode, with oxidizing properties, is applied to the membrane. A current is applied to the bathless setup. Upon removing the current and composite mixture from the cathode, a metal-based composite coating remains on the cathode.

A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.