The present invention relates to a light-converting material which comprises a luminescent material with semiconductor nanoparticles (quantum materials), where the semiconductor nanoparticles are located on the surface of the luminescent material and the emission from the semiconductor nanoparticles is in the region of the emission from the luminescent material. The present invention furthermore relates to a process for the preparation of the light-converting material and to the use thereof in a light source. The present invention furthermore relates to a light-converting mixture, a light source, a lighting unit which contains the light-converting material according to the invention, and a process for the production thereof.

An ink composition according to an embodiment of the present invention, comprising: a volatile solvent; and dispersed in the volatile solvent, a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands, wherein a ratio by mass of the semiconductor nanoparticles to the volatile solvent is greater than 1:1. A product according to an embodiment of the present invention comprising: a solid substrate; and arranged on the solid substrate, a dried residue of an ink composition, the dried residue comprising a plurality of semiconductor nanoparticles arranged without an intervening polymer matrix, wherein the a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands.

An ink composition according to an embodiment of the present invention, comprising: a volatile solvent; and dispersed in the volatile solvent, a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands, wherein a ratio by mass of the semiconductor nanoparticles to the volatile solvent is greater than 1:1. A product according to an embodiment of the present invention comprising: a solid substrate; and arranged on the solid substrate, a dried residue of an ink composition, the dried residue comprising a plurality of semiconductor nanoparticles arranged without an intervening polymer matrix, wherein the a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands.

Provided are an inorganic fluorescent nanoparticle composite that can suppress the degradation of inorganic fluorescent nanoparticles when sealed in glass and a wavelength conversion member using the inorganic fluorescent nanoparticle composite. An inorganic fluorescent nanoparticle composite 1 is made up by including: an inorganic fluorescent nanoparticle 2; and an inorganic fine particle 3 deposited on a surface of the inorganic fluorescent nanoparticle 2.

Provided are an inorganic fluorescent nanoparticle composite that can suppress the degradation of inorganic fluorescent nanoparticles when sealed in glass and a wavelength conversion member using the inorganic fluorescent nanoparticle composite. An inorganic fluorescent nanoparticle composite 1 is made up by including: an inorganic fluorescent nanoparticle 2; and an inorganic fine particle 3 deposited on a surface of the inorganic fluorescent nanoparticle 2.

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M.sup.2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M.sup.2 undergoes cation exchange with a metal element M.sup.1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.

A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M.sup.2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M.sup.2 undergoes cation exchange with a metal element M.sup.1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.

An inorganic light emitting diode in which at least one energy control layer including an organometallic compound interacting with a hydroxyquinoline moiety is disposed between an emitting material layer and at least one charge transfer layer and an inorganic light emitting device including the diode are disclosed. An exciton recombination zone is formed at the central region in the EML, and inorganic luminescent particles have minimal surface defects by introducing the energy control layer. The inorganic light emitting diode and the inorganic light emitting device can improve their color purity and luminous efficiency.