Bulk assemblies are provided, which may have desirable photoluminescence quantum efficiencies. The bulk assemblies may include two or more metal halides, and a wide band gap organic network. The wide band gap organic network may include organic cations. The metal halides may be disposed in the wide band gap organic network. Light emitting composite materials also are provided.

A method to modify the surface of III-V quantum dots. III-V quantum dots provided with X type ligands and L type ligands at their outer surface are dispersed in a solvent include an additional compound. The additional compound has an organic acid of formula RYH or an organic salt of formula RYH+Z− and has at least one acidic proton H+ having a pKa in water equal to or lower than 16. During dispersion the acidic proton H+ protonates at least part of the L type ligands and at least part of the X type ligands are replaced. Surface modified quantum dots, dispersions having such surface modified quantum dots and to the use of such dispersions are disclosed.

The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.

This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi.sub.2-xA.sub.xSiO.sub.5, Bi.sub.2-xA.sub.xSi.sub.3O.sub.9, Bi.sub.4-xA.sub.xSi.sub.3O.sub.9, and Bi.sub.12-xA.sub.xSiO.sub.20, where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.

The presently disclosed subject matter relates generally to GaAs.sub.1−xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

A method of patterning quantum dots, a device using same, and a system thereof are provided. By providing a base between a plurality of upper electrodes and a plurality of lower electrodes, coating a quantum dot solution on an upper surface of the base, and powering the upper electrodes and the lower electrodes to form an electric field between the upper electrodes and the lower electrodes, the quantum dot solution is gathered between the upper electrodes and the lower electrodes according to an electric field distribution. Subsequently, the quantum dot solution can be deposited into a film by evaporation of a solvent, thereby obtaining a patterned quantum dot thin film on the base.

According to an aspect, a method of preparing quantum dots includes a first operation of preparing a quantum dot seed solution; a second operation of growing a quantum dot by continuously injecting a quantum dot cluster solution into the quantum dot seed solution; a third operation of separating the grown quantum dot and dispersing the quantum dot in a solvent; and a fourth operation of further growing the quantum dot by continuously injecting the quantum dot cluster solution into the dispersed quantum dot.

The present disclosure relates to quantum dots with a core of III-V material, a first layer of II-VI material and an external shell of II-VI material to be used, for example, in downconverters. The external shell is preferably made of an alloy of Zn and Cd with Se or S. Introducing a small amount of Cd in the external shell provides excellent absorbance performance in blue, violet and UV wavelengths. The amount of Cd needed for this increase in absorbance can be very low. Further, the emitted light can be nearly monochromatic, which is especially interesting in electronic applications.

The present invention relates to a composition comprising at least one nanosized light emitting material.

The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.