The present invention provides a rare-earth halide scintillating material and application thereof. The rare-earth halide scintillating material has a chemical formula of RE.sub.aCe.sub.bX.sub.3, wherein RE is a rare-earth element La, Gd, Lu or Y, X is one or two of halogens Cl, Br and I, 0≤a≤1.1, 0.01≤b≤1.1, and 1.0001≤a+b≤1.2. By taking a +2 valent rare-earth halide having the same composition as a dopant to replace a heterogeneous alkaline earth metal halide in the prior art for doping, the rare-earth halide scintillating material is relatively short of a halogen ion. The apparent valence state of a rare-earth ion is between +2 and +3. The rare-earth halide scintillating material belongs to non-stoichiometric compounds, but still retains a crystal structure of an original stoichiometric compound, and has more excellent energy resolution and energy response linearity than the stoichiometric compound.

The present invention provides a rare-earth halide scintillating material and application thereof. The rare-earth halide scintillating material has a chemical formula of RE.sub.aCe.sub.bX.sub.3, wherein RE is a rare-earth element La, Gd, Lu or Y, X is one or two of halogens Cl, Br and I, 0≤a≤1.1, 0.01≤b≤1.1, and 1.0001≤a+b≤1.2. By taking a +2 valent rare-earth halide having the same composition as a dopant to replace a heterogeneous alkaline earth metal halide in the prior art for doping, the rare-earth halide scintillating material is relatively short of a halogen ion. The apparent valence state of a rare-earth ion is between +2 and +3. The rare-earth halide scintillating material belongs to non-stoichiometric compounds, but still retains a crystal structure of an original stoichiometric compound, and has more excellent energy resolution and energy response linearity than the stoichiometric compound.

Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.

The present invention relates to a rare earth halide scintillating material. The material has a general chemical formula La.sub.1-xCe.sub.xBr.sub.3+y, wherein 0.001x1, and 0.0001y0.1. The rare earth halide scintillating material involved in the present invention has excellent scintillation properties of high light output, high energy resolution, and fast decay.

The invention provides luminescent material comprising E.sub.1-wSc.sub.1-x-y-u-wM.sub.yZ.sub.uA.sub.2wSi.sub.2-z-uGe.sub.zAl.sub.uO.sub.6:Cr.sub.x, wherein: E comprises one or more of Li, Na, and K; M comprises one or more of Al, Ga, In, Tm, Yb, and Lu; Z comprises one or more of Ti, Zr, and Hf; A comprises one or more of Mg, Zn, and Ni; 0<x≤0.25; 0≤y≤0.75; 0≤z≤2; 0≤u≤1; 0≤w≤1; x+y+u+w≤1; and z+u≤2.

The invention provides luminescent material comprising E.sub.1-wSc.sub.1-x-y-u-wM.sub.yZ.sub.uA.sub.2wSi.sub.2-z-uGe.sub.zAl.sub.uO.sub.6:Cr.sub.x, wherein: E comprises one or more of Li, Na, and K; M comprises one or more of Al, Ga, In, Tm, Yb, and Lu; Z comprises one or more of Ti, Zr, and Hf; A comprises one or more of Mg, Zn, and Ni; 0<x≤0.25; 0≤y≤0.75; 0≤z≤2; 0≤u≤1; 0≤w≤1; x+y+u+w≤1; and z+u≤2.

A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

A coated phosphor including: an inorganic phosphor particle; and a silicon oxide coating that coats the inorganic phosphor particle, wherein a molar ratio (O/Si) of an oxygen atom to a silicon atom in the silicon oxide coating through ICP emission spectroscopy of the coated phosphor is 2.60 or less.

A phosphor plate includes a plate-like composite including a base material and an α-type sialon phosphor present in the base material, in which, in an X-ray diffraction analysis pattern using a Cu-Kα ray, in a case in which peak intensity corresponding to the α-type sialon phosphor having a diffraction angle 2 θ in a range of 30.2° or more and 30.4° or less is defined as I.sub.α and peak intensity of a peak having a diffraction angle 2 θ in a range of 26.6° or more and 26.8° or less is defined as I.sub.β, I.sub.α, and I.sub.β satisfy 0<I.sub.β/I.sub.α≤10.

Aerosol-deposited thermographic phosphors can be used for non-contact, two-dimensional temperature sensing in extreme environments. The fast response time and thermal/environmental stability of doped ceramic powders allow for temperature measurements up to the melting point of the phosphor on hot surfaces, such as rapidly rotating turbine components and combustors.