A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

A composition contains quantum dots (A) and a resin (B), wherein the resin (B) contains a polymer (B1) having a sulfide group, a carboxyl group, and an unsaturated double bond.

A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d.sub.5/2 as an area percentage is less than or equal to about 25%.

The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.

A method of fabricating the organic-inorganic hybrid coating layer includes: preparing a gel mixture including an organic precursor and colloidal silica particles; preparing a first mixed solution by heating the gel mixture; preparing a second mixed solution by adding quantum dots to the first mixed solution; and coating the second mixed solution on a substrate and irradiating light thereon to form a polymer matrix in which the organic precursor and the colloidal silica particles are crosslinked, and preparing a coating layer in which the quantum dots are dispersed in the polymer matrix, wherein the organic precursor may include at least one of dipentaerythritol pentaacrylate (DPPA) or dipentaerythritol hexaacrylate (DPHA).

A quantum dot, a method of manufacturing the quantum dot, a composition including the quantum dot, an optical member including the quantum dot, and an electronic apparatus including the quantum dot are disclosed. The quantum dot includes: a nanomaterial; and a first ligand arranged on a surface of the nanomaterial, wherein the nanomaterial includes a core and a shell that covers at least a part of the core, wherein the first ligand includes a condensed polycyclic group in which two or more rings are condensed.

A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

A display device can include a substrate including a display area, a subpixel positioned on the substrate and positioned in the display area, and a black bank positioned on the substrate. The black bank can include a first opening corresponding to an emission area of the subpixel, and quantum dots that absorb light having a wavelength in a visible light region. As a result, the display device can reduce external light reflectance.

A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.