The present disclosure relates to a quantum dot and a preparation method for the same, and a photoelectric device. The quantum dot includes a core and a shell layer coating the core, a material of the core is CdZnSe, and a material of the shell layer is CdZnS, wherein, a molar ratio of Cd element with respect to S element in the shell layer is from 0.15:1 to 0.4:1.

A core-shell type quantum dot comprising, a semiconductor nanocrystal core including at least In and P, and having group III-V elements as constituent elements and a single or a plurality of semiconductor nanocrystal shells having group II-VI elements as constituent elements covering the semiconductor nanocrystal core, wherein a buffer layer comprising semiconductor nanocrystals having group II-V elements as constituent elements is included between the semiconductor nanocrystal core and the semiconductor nanocrystal shell. As a result, quantum dots using group II-V semiconductor nanocrystals as a core and having improved fluorescence emission efficiency are provided.

A core-shell type quantum dot comprising, a semiconductor nanocrystal core including at least In and P, and having group III-V elements as constituent elements and a single or a plurality of semiconductor nanocrystal shells having group II-VI elements as constituent elements covering the semiconductor nanocrystal core, wherein a buffer layer comprising semiconductor nanocrystals having group II-V elements as constituent elements is included between the semiconductor nanocrystal core and the semiconductor nanocrystal shell. As a result, quantum dots using group II-V semiconductor nanocrystals as a core and having improved fluorescence emission efficiency are provided.

A wavelength converter material and a method of A method of preparing a wavelength converter material may include providing an optionally oxide coated phosphor material, mixing the optionally oxide coated phosphor material with an optionally oxide coated paramagnetic nanoparticle, coating the optionally oxide coated phosphor material and the optionally oxide coated paramagnetic nanoparticle with an oxide coating, thereby preparing a coated phosphor-nanoparticle particle, and separating the coated phosphor-nanoparticle particle, thereby preparing a wavelength converter material. The separating of the coated phosphor-nanoparticle particle may be manipulated by applying a magnetic field.

Furthermore, a wavelength converter material, as well as a light emitting diode are described herein.

A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.

Summary

The therapeutic device of the invention consists of a support to be placed on the skin of a patient and made of specific nanocrystals, which when properly activated, produce electromagnetic emissions that have beneficial effects on inflammatory, painful pathologies, and neuro-muscular and postural modulations of the patient.

A method for preparing a ZnSe quantum dot, a ZnSe quantum dot, a ZnSe structure and a display device are provided. The method includes preparing a first zinc precursor solution, a second zinc precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution, adding the first selenium precursor solution to the second zinc precursor solution to form an intermediate of the ZnSe quantum dot, performing the following operation at least once to form the ZnSe quantum dot: sequentially adding the first zinc precursor solution and the second selenium precursor solution to the intermediate of the ZnSe quantum dot and making the first zinc precursor solution, the second selenium precursor solution, and the intermediate of the ZnSe quantum dot react.

A method for preparing a ZnSe quantum dot, a ZnSe quantum dot, a ZnSe structure and a display device are provided. The method includes preparing a first zinc precursor solution, a second zinc precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution, adding the first selenium precursor solution to the second zinc precursor solution to form an intermediate of the ZnSe quantum dot, performing the following operation at least once to form the ZnSe quantum dot: sequentially adding the first zinc precursor solution and the second selenium precursor solution to the intermediate of the ZnSe quantum dot and making the first zinc precursor solution, the second selenium precursor solution, and the intermediate of the ZnSe quantum dot react.

The disclosure provides a II-II-VI alloy quantum dot, a preparation method and application thereof. The preparation method includes: step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster; step S2: mixing the II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot.

A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.