An inorganic light emitting diode in which at least one energy control layer including an organometallic compound interacting with a hydroxyquinoline moiety is disposed between an emitting material layer and at least one charge transfer layer and an inorganic light emitting device including the diode are disclosed. An exciton recombination zone is formed at the central region in the EML, and inorganic luminescent particles have minimal surface defects by introducing the energy control layer. The inorganic light emitting diode and the inorganic light emitting device can improve their color purity and luminous efficiency.

A quantum dot material includes quantum dot particles and a first ligand bonded to a surface of the quantum dot particles. The first ligand is a metal-organic framework (MOF) monomer, and the MOF monomer includes at least three first active groups bonded to the quantum dot particles.

A quantum dot material includes quantum dot particles and a first ligand bonded to a surface of the quantum dot particles. The first ligand is a metal-organic framework (MOF) monomer, and the MOF monomer includes at least three first active groups bonded to the quantum dot particles.

Light emitting devices and LED-filaments comprise an excitation source (e.g. LED) and a photoluminescence material comprising a combination of a first narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 580 nm to 628 nm and a full width at half maximum emission intensity in a range 45 nm to 60 nm and a second narrow-band red photoluminescence material generates light with a peak emission wavelength in a range 628 nm to 640 nm and a full width at half maximum emission intensity in a range 5 nm to 20 nm. At least one of the first and second narrow-band red photoluminescence materials can comprise a narrow-band red phosphor or a quantum dot (QD) material.

A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

A method of producing core/shell semiconductor nanoparticles, the method comprising a shell formation step of adding a solution of group VI element precursor while adding a solution of zinc branched chain carboxylate to a core particle-dispersed solution to allow the zinc branched chain carboxylate to react with the group VI element precursor in presence of the core particles for forming a shell containing zinc and the group VI element on surfaces of the core particles. The present invention can provide a simple semiconductor nanoparticle production method of producing core/shell semiconductor nanoparticles with excellent optical properties when two or more types of the shell precursors are used to produce the core/shell semiconductor nanoparticles.

Provided are a photosensitive resin composition having low viscosity and high compatibility prepared by providing a semiconductor nanoparticle-ligand composite comprising a ligand represented by Formula 1, an optical film having uniform and remarkably excellent quantum efficiency using the photosensitive resin composition, and an electroluminescent diode comprising the optical film and an electronic device comprising an electroluminescent diode.

An ink composition including: a quantum dot including one or more ligands on a surface of the quantum dot; a first monomer including one or more epoxy groups; a second monomer including one or more oxetane groups; and a vinyl group-containing compound including one or more vinyl groups, wherein the one or more ligands include one or more polar moieties. Also provided is an electronic apparatus including a film formed using the ink composition, and a light emitting device.

An electroluminescent device includes a first electrode and a second electrode spaced apart from each other, and a light emitting layer including semiconductor nanoparticles. The semiconductor nanoparticles do not contain cadmium, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, the semiconductor nanoparticles have a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, the first semiconductor nanocrystals include a first zinc chalcogenide containing sulfur, in the semiconductor nanoparticles, a mole ratio of sulfur to tellurium is greater than or equal to about 0.5:1 and less than or equal to about 110:1, and the semiconductor nanoparticles are configured to emit light having a maximum emission peak wavelength of greater than or equal to about 440 nanometers (nm) and less than or equal to about 580 nm, and the semiconductor nanoparticles have a quantum yield of greater than or equal to about 40%.

The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising donor-acceptor ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.