The invention provides a lighting device (100) configured to provide lighting device light (101), the lighting device (100) comprising a solid state light source (10) configured to provide blue light (11) having a peak wavelength (.sub.PWL) selected from the range of 430-455 nm, a first luminescent material (210) configured to convert part of the blue light (11) into first luminescent material light (211) and a second luminescent material (220) configured to convert part of one or more of the blue light (11) and the first luminescent material light (211) into second luminescent material light (221), wherein the solid state light source (10), the first luminescent material (210), and the second luminescent material (220) are selected to provide at a first setting of the lighting device (100) white lighting device light (101) having a CRI of at least 90, a R.sub.9 value of at least 70, and a R.sub.50 value of at maximum 465 nm, wherein the R.sub.50 value is defined as a first wavelength (.sub.50) in a spectral distribution of the white lighting device light (101) at the first setting, wherein the first wavelength (.sub.50) is a wavelength closest to the peak wavelength (.sub.PWL) but at a longer wavelength than the peak wavelength (.sub.PWL) of the blue light (11) where the peak intensity (I.sub.50) is 50% of the intensity (I.sub.PWL) at the peak wavelength (.sub.PWL).

The invention provides a lighting device (100) configured to provide lighting device light (101), the lighting device (100) comprising a solid state light source (10) configured to provide blue light (11) having a peak wavelength (.sub.PWL) selected from the range of 430-455 nm, a first luminescent material (210) configured to convert part of the blue light (11) into first luminescent material light (211) and a second luminescent material (220) configured to convert part of one or more of the blue light (11) and the first luminescent material light (211) into second luminescent material light (221), wherein the solid state light source (10), the first luminescent material (210), and the second luminescent material (220) are selected to provide at a first setting of the lighting device (100) white lighting device light (101) having a CRI of at least 90, a R.sub.9 value of at least 70, and a R.sub.50 value of at maximum 465 nm, wherein the R.sub.50 value is defined as a first wavelength (.sub.50) in a spectral distribution of the white lighting device light (101) at the first setting, wherein the first wavelength (.sub.50) is a wavelength closest to the peak wavelength (.sub.PWL) but at a longer wavelength than the peak wavelength (.sub.PWL) of the blue light (11) where the peak intensity (I.sub.50) is 50% of the intensity (I.sub.PWL) at the peak wavelength (.sub.PWL).

A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

The present disclosure relates to a manufacturing method of a quantum dot layer, a quantum dot color filter, a color filter substrate, a display panel, and a display device. The manufacturing method includes: performing lyophobic treatment on a first specified region of a first transparent layer, the first transparent layer including regions corresponding to a plurality of pixel regions, each pixel region of the plurality of pixel regions comprising a first subpixel region and a region other than the first subpixel region, the first specified region corresponding to the region other than the first subpixel region; and preparing a lyophilic first quantum dot solution on the first transparent layer to form a first quantum dot sublayer in a region that corresponds to the first subpixel region and is not subjected to the lyophobic.

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.

Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 m to 12 m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 m to 12 m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

The present discloser relates to an infrared device using intra-band electron transition of non-stoichiometric quantum dots and, more specifically, to non-stoichiometric quantum dot nanoparticles and an infrared device comprising the nanoparticles, in which the nanoparticles comprise quantum dot cores and nonthiol ligands bonded to the core and emits infrared rays from electron transition between discrete energy levels in the band. The infrared device has an effect of emitting infrared rays, particularly, mid-infrared rays or far-infrared rays, by using the electron transition between discrete energy levels in the band of quantum dots in which the proportion of a metal is higher than that of a chalcogen. In addition, the quantum dots are prepared by containing nonthiol ligands, and thus, compared with a conventional thiol ligand, ligand substitution is very easy while the n-type doping of quantum dots is maintained.

Many embodiments implement quantum confined nanoplatelets (NPLs) that can be induced to emit bright and tunable infrared emission from attached quantum dot (QD). Some embodiments provide mesoscale NPLs with a largest dimension of greater than 1 micron. Certain embodiments provide methods for growing mesoscale NPLs and QD on mesoscale NPLs heterostructures. Several embodiments provide near unity energy transfer from NPLs to QDs, which can quench NPL emission and emit with high quantum yield through the shortwave infrared. The QD defect emission can be kinetically tunable, enabling controlled mid-gap emission from NPLs.