The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.

According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

An object of the present invention is to provide a treatment method excellently flattens an object to be treated in a case where the treatment method is applied to an object to be treated having a metal layer. Another object of the present invention is to provide a treatment liquid for an object to be treated. The method for treating an object to be treated according to an embodiment of the present invention is a method for treating an object to be treated having a step A of performing an oxidation treatment on an object to be treated having a metal layer so as to form a metal oxide layer and a step B of bringing a treatment liquid into contact with the object to be treated obtained by the step A so as to dissolve and remove the metal oxide layer, in which the treatment liquid contains an organic solvent and an acidic compound, and a content of the organic solvent is 50% by mass or more with respect to a total mass of the treatment liquid.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

An etchant composition includes: an inorganic acid compound at 9.0 wt % to 9.9 wt %; an inorganic salt compound at 5.0 wt % to 10.0 wt %; an organic acid compound at 35 wt % to 45 wt %; a lactate-based compound at 10 wt % to 20 wt %; a nitrogen cyclic compound containing oxygen at 0.1 wt % to 1.0 wt %; and a remaining amount of water such that a total weight of the etchant composition is 100 wt %, wherein the inorganic acid compound is an etchant composition having an acid dissociation constant (pKa) value of −1.0 to −3.0.

An etchant composition includes: an inorganic acid compound at 9.0 wt % to 9.9 wt %; an inorganic salt compound at 5.0 wt % to 10.0 wt %; an organic acid compound at 35 wt % to 45 wt %; a lactate-based compound at 10 wt % to 20 wt %; a nitrogen cyclic compound containing oxygen at 0.1 wt % to 1.0 wt %; and a remaining amount of water such that a total weight of the etchant composition is 100 wt %, wherein the inorganic acid compound is an etchant composition having an acid dissociation constant (pKa) value of −1.0 to −3.0.