The present invention addresses the problem of providing a decomposition inhibitor for inhibiting the decomposition of hydrogen peroxide included in an etching liquid composition for titanium nitride.

The present invention relates to a decomposition inhibitor that is used to inhibit the decomposition of hydrogen peroxide included in an etching liquid composition for titanium nitride and that includes at least one compound selected from among azole compounds, aminocarboxylic acid compounds, and phosphonic acid compounds as an active component.

The present invention addresses the problem of providing a decomposition inhibitor for inhibiting the decomposition of hydrogen peroxide included in an etching liquid composition for titanium nitride.

The present invention relates to a decomposition inhibitor that is used to inhibit the decomposition of hydrogen peroxide included in an etching liquid composition for titanium nitride and that includes at least one compound selected from among azole compounds, aminocarboxylic acid compounds, and phosphonic acid compounds as an active component.

An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed, ##STR00001##

An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed, ##STR00001##

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

According to one embodiment, an etching method includes etching a surface made of a semiconductor and having a catalyst layer formed on the surface, by an etching agent in contact with the surface. The catalyst layer contains noble metal. The etching agent contains an oxidizer, a corrosive agent, and a N-containing polymer agent.

According to one embodiment, an etching method includes etching a surface made of a semiconductor and having a catalyst layer formed on the surface, by an etching agent in contact with the surface. The catalyst layer contains noble metal. The etching agent contains an oxidizer, a corrosive agent, and a N-containing polymer agent.

The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.